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Surface morphology and composition studies in InGaN/GaN film grown by MOCvD

Journal of Semiconductors 2011年第8期32卷 14-17页

作者：陶涛张曌刘炼苏辉谢自力张荣刘斌修向前李毅韩平施毅郑有炓 Key Laboratory of Advanced Photonic and Electronic Materials School of Electronics Science and EngineeringNanjing University

InGaN films were deposited on（0001） sapphire substrates with GaN buffer layers under different growth temperatures by metalorganic chemical vapor *** In-composition of InGaN film was approximately controlled by changing the growth *** connection between the growth temperature,In content,surface morphology and defect formation was obtained by X-ray diffraction,scanning electron microscopy（SEM） and atomic force microscopy（AFM）.Meanwhile,by comparing the SEM and AFM surface morphology images,we proposed several models of three different defects and discussed the mechanism of *** prominent effect of higher growth temperature on the quality of the InGaN films and defect control were found by studying InGaN films at various growth temperatures.

关键词： InGaN film MOCvD surface morphology v-defects

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Anomalous temperature-dependent photoluminescence peak energy in InAlN alloys

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Journal of Semiconductors 2014年第9期35卷 16-20页

作者：李维金鹏王维颖毛德丰刘贵鹏王占国王嘉铭许福军沈波 Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low-Dimensional Semiconductor Materials and Devices Institute of Semiconductors Chinese Academy of Sciences State Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of Physics Peking University

InA1N has been studied by means of temperature-dependent time-integrated photoluminescence and time-resolved photoluminescence. The variation of PL peak energy did not follow the behavior predicted by varshni formula, and a faster redshift with increasing temperature was observed. We used a model that took account of the thermal activation and thermal transfer of localized excitons to describe and explain the observed behavior. A good fitting to the experiment result is obtained. We believe the anomalous temperature dependence of PL peak energy shift can be attributed to the temperature-dependent redistribution of localized excitons induced by thermal activation and thermal transfer in the strongly localized states. v-shaped defects are thought to be a major factor causing the strong localized states in our ln0.153Al0.847N sample.

关键词： InA1N photoluminescence thermal activation v-defects

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Advantages of InGaN/GaN light emitting diodes with p-GaN grown under high pressure

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Journal of Semiconductors 2014年第11期35卷 70-73页

作者：付丙磊刘乃鑫刘喆李晋闽王军喜 Research and Development Center for Semiconductor Lighting Chinese Academy of Sciences

The advantages of InGaN/GaN light emitting diodes （LEDs） with p-GaN grown under high pressures are studied. It is shown that the high growth pressure could lead to better electronic properties of p-GaN layers due to the eliminated compensation effect. The contact resistivity of p-GaN layers are decreased due to the reduced donor-like defects on the p-GaN surface. The leakage current is also reduced, which may be induced by the better filling of v-defects with p-GaN layers grown under high pressures. The LED efficiency thus could be enhanced with high pressure grown p-GaN layers.

关键词： light emitting diodes v-defects growth pressure p-GaN

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