Improvement in Electrical Properties of SIMNI Films by Multiple-Step Implantation

作     者：卢殿通 Heiner Ryssel LU Dian-tong;Heiner Ryssel

作者机构：北京师范大学 北京 1 0 0 875 Fraungofer-Arbeitsgruppe fur Integrierte Schaitungem Abteilu 德国 D-852 0 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2000年第21卷第9期

页      面：848-852页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：Project Supported by National Natural Science Foundation of China Under Grant !No.697760 0 6 

主　　题：electrical properties multiple-step 

摘      要：SOI-SIMNI (Silicon On Insulator-Separation by Implanted Nitrogen) films were formed with standard method and multiple-step implantation one. The Hall-e ffect measurements (4—300K) show that the multiple-step implanted SIMNI films have a lower sheet resistance and higher carrier mobility than those in standar d SIMNI films. The DLTS results indicate that there is a deep level defect (E_t=0.152 eV) in the standard SIMNI films but no such defects in the multip le-step implanted ones. The multiple-step implanted SIMNI films have good elec trical properties.