Hole effective mass in strained Si (111)

作     者：HU HuiYon ZHANG HeMing SONG JianJun XUAN RongXi DAI XianYing 

作者机构：Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices School of Microelectronics Xidian University Xi’an 710071 China 

出 版 物：《Science China(Physics,Mechanics & Astronomy)》 (中国科学：物理学、力学、天文学（英文版）)

年 卷 期：2011年第54卷第3期

页      面：450-452页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0702[理学-物理学] 

基　　金：supported by the National Ministries and Commissions (Grant Nos. 51308040203 and 6139801) the Fundamental Research Funds for the Central Universities (Grant Nos. 72105499 and 72104089) the Natural Science Basic Research Plan in Shaanxi Province of China (Grant No. 2010JQ8008) 

主　　题：strained Si hole effective mass 

摘      要：The directional, averaged, and density-of-states effective masses of holes have been calculated for strained Si/(111)Si1-xGex. The results for the directional effective mass show that the effect of strain makes the constant energy surface of heavy holes more obvious warping than that in relaxed Si. The [111] and [110] directional effective masses of heavy holes decrease significantly under strain. It is found that the averaged effective mass of heavy holes decreases with increasing Ge fraction, while that of light holes increases. The traditional concepts of heavy and light holes become insignificant when Ge fraction is close to 0.4. The strain effect monotonically reduces the density-of-states effective mass at 218, 300 and 393 K, respectively.