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Observation of supersymmetric pseudo-Landau levels in strained microwave graphene

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Light(Science & Applications) 2020年第1期9卷 611-617页

作者： Matthieu Bellec Charles Poli Ulrich Kuhl Fabrice Mortessagne Henning Schomerus Institut de Physique de Nice(INPHYNI) Universite Cote d’AzurCNRS06108 NiceFrance Department of Physics Lancaster UniversityLancaster LA14YBUK

Using an array of coupled microwave resonators arranged in a deformed honeycomb lattice,we experimentally observe the formation of pseudo-Landau levels in the whole crossover from vanishing to large pseudomagnetic field *** result is achieved by utilising an adaptable setup in a geometry that is compatible with the pseudo-Landau levels at all field *** adopted approach enables us to observe the fully formed flat-band pseudo-Landau levels spectrally as sharp peaks in the photonic density of states and image the associated wavefunctions spatially,where we provide clear evidence for a characteristic nodal structure reflecting the previously elusive supersymmetry in the underlying low-energy *** particular,we resolve the full sublattice polarisation of the anomalous 0th pseudo-Landau level,which reveals a deep connection to zigzag edge states in the unstrained case.

关键词： microwave strained Landau

Electronic Structure of InAsxP_(1-x)/InP strained Quantum Wires

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Chinese Physics Letters 1998年第8期15卷 594-596页

作者： HE Guo-min LI Kai-hang WANG Ren-zhi ZHENG Yong-mei Department of Physics Xiamen UniversityXiamen 361005

The electronic structure of InAs_(0.25)P_(0.75)/InP strained quantum wires grown on InP(001)oriented substrates is studied within the framework of effective-mass envelope-function *** theΓpoint,the electron and valence subband energy levels with and without spin-split-off band,and the absorption spectra are *** effects of strain and spin-split-off band on valence energy levels are *** results show that the uppermost valence subband is almost unaffected by the strain induced coupling between the heavy-and light-hole bands and the spin-split-off bands while the other subbands are more markedly affected in the InAs0.25P0.75/InP strained quantum wires.

关键词： bands strained quantum

Experimental Synthesis of strained Monolayer Silver Arsenide on Ag(111)Substrates

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Chinese Physics Letters 2020年第6期37卷 111-114页

作者： Shuai Zhang Yang Song Hang Li Jin-Mei Li Kai Qian Chen Liu Jia-Ou Wang Tian Qian Yu-Yang Zhang Jian-Chen Lu Hong Ding Xiao Lin Jinbo Pan Shi-Xuan Du Hong-Jun Gao Institute of Physics Chinese Academy of SciencesBeijing 100190China School of Physical Sciences University of Chinese Academy of SciencesChinese Academy of SciencesBeijing 100190China Institute of High Energy Physics Chinese Academy of SciencesBeijing 100190China CAS Center for Excellence in Topological Quantum Computation University of Chinese Academy of SciencesBeijing 100190China Kunming University of Science and Technology Kunming 650500China

Two-dimensional(2 D)materials are playing more and more important roles in both basic sciences and industrial *** 2 D materials,strain could tune the properties and enlarge *** the growth of 2 D materials on substrates is often accompanied by strain,the interaction between 2 D materials and substrates is worthy of careful *** we demonstrate the fabrication of strained monolayer silver arsenide(AgAs)on Ag(111)by molecular beam epitaxy,which shows one-dimensional stripe structures arising from uniaxial *** atomic geometric structure and electronic band structure are investigated by low energy electron diffraction,scanning tunneling microscopy,x-ray photoelectron spectroscopy,angle-resolved photoemission spectroscopy and first-principle *** AgAs synthesized on Ag(111)provides a platform to study the physical properties of strained 2 D materials.

关键词： materials. strained silver

Calculation of band structure in (101)-biaxially strained Si

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Science China(Physics,Mechanics & Astronomy) 2009年第4期52卷 546-550页

作者： SONG JianJun ZHANG HeMing HU HuiYong FU Qiang Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices School of MicroelectronicsXidian UniversityXi’an 710071China

The structure model used for calculation was defined according to Vegard’s rule and Hooke’s law. Calculations were performed on the electronic structures of (101)-biaxially strained Si on relaxed Si1?X Ge X alloy with Ge fraction ranging from X = 0 to 0.4 in steps of 0.1 by CASTEP approach. It was found that [±100] and [00±1] valleys (δ4) splitting from the [0±10] valley (Δ2) constitute the conduction band (CB) edge, that valence band (VB) edge degeneracy is partially lifted and that the electron mass is unaltered under strain while the hole mass decreases in the [100] and [010] directions. In addition, the fitted dependences of CB splitting energy, VB splitting energy and indirect bandgap on X are all linear.

关键词： strained Si band structure effective mass

PHOTOLUMINESCENCE SPECTRA OF strained HETEROSTRUCTURE OF InP ON GaAs SUBSTRATE GROWN BY METAI^ ORGANIC CHEMICAL VAPOR DEPOSITION

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Chinese Physics Letters 1990年第11期7卷 522-525页

作者： TENG Da ZHUANG Weihua Laboratory of Superlattice and Microstructure Institute of SemiconductorsAcademia SinicaBeijing 100083

A high-energy shift of the band-band recombination has been observed tn photoluminescence spectra of the strained InP layer grown on GaAs *** InP layer is under biaxial compressive strain at temperatures below the growth temperaiure,because the thermal expansion coefficient of InP is smaller than that of GaAs,The strain value determined by the energy shift of the bandedge peak is in good agreement with the calculated thermal strain.A band to carbon acceptor recombination is also identified.

关键词： tempera thermal strained

LATTICE DYNAMICS OF strained Si/Ge SUPERLATTICES

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Chinese Physics Letters 1990年第5期7卷 230-233页

作者： ZI Jian ZHANG Kaiming XIE Xide Physics Department Fudan UniversityShanghai 200433

Lattice dynamics of strained(Si)_(4)/(Ge)_(4) superlattice grown pseudomorphically on (001)-oriented Si_(1-x)Ge_(x)(0≤x≤1)substrate is *** the present calculations,the effects of strain and substrate are discussed.

关键词： Si/Ge strained SUPER

PHOTOLUMINESCENCE STUDIES OF In_(0.25)Ga_(0.75)As-GaAs strained QUANTUM WELLS UNDER HIGH PRESSURE

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Chinese Physics Letters 1989年第2期6卷 76-79页

作者： WANG Lijun HOU Hongqi ZHOU Junming TANG Ruming LU Zhidong WANG Yanyun HUANG Qi Institute of Physics Academia SinicaBeijing

We report the results of the photoluminescence(PL)studies of the ***.r$As-GaAs strained quantum wells(QW’s)at 77K and at high pressures up to *** pressure coefficients of the T valley of(InGa)As-GaAs strained QW’s are presented for the first *** crossover between the energy level in the well and the X valley in the barrier GaAs has been *** ratio of the conduction band offset to valence band offset in In_(0.25)Ga_(0.75)As-GaAs heterojunction was determined to be Qc=ΔEc:ΔEv=0.68:*** discussions about GaAs-Al0.3Ga0.7As QW’s are also presented.

关键词： heterojunction valley strained

Conversion efficiency of strained wurtzite In_(x)Ga_(1-x)N/ZnSnN_(2)core/shell quantum dot solar cells under external electric field

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Optoelectronics Letters 2023年第3期19卷 144-150页

作者： ZHANG Jun SHI Lei YAN Zuwei College of Science Inner Mongolia Agricultural UniversityHohhot 010018China

In this study,the conversion efficiency(CE),open-circuit voltage(V_(OC))and short-circuit current density(J_(SC))of wurtzite In_(x)Ga_(1-x)N/ZnSnN_(2)core/shell quantum dot(QD)solar cells are studied by using the detailed balance *** effects of strain and external electric field have been *** results show that with the increase of the core size,the V_(OC)increases,while the J_(SC)and CE *** the increase of shell size or In content,the V_(OC)decreases,while the J_(SC)and CE *** addition,our calculations show that the band gap of QD increases due to strain,which leads to an increase of the V_(OC),but decreases of the CE and J_(SC).By contrast,the situation is opposite under the effect of external electric field.

关键词： quantum strained field

Extremely　low　threshold　current　density　strained　InGaAs／AlGaAs　quantum　well　lasers　by　molecular　beam　epitaxy

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Journal of Semiconductors 1994年第8期15卷 565-568页

作者： Yang Guowen Xu Junying Xiao Jianwei Xu Zuntu Zhang Jingming Zheng Wanhua Zeng Yiping and Chen Lianghui(Institute of Semiconductors, The Chinese Academy of Sciences, National Integrated Optoelectronics Lob., Beijing 100083) 中科院半导体所集成光电子学联合国家重点实验室北京

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关键词： AlGaAs strained beam current density epitaxy lasers low molecular quantum Extremely InGaAs well