PHOTOLUMINESCENCE OF GaP(N, Te, Zn) UNDER HYDROSTATIC PRESSURE

作     者：ZHAO Xue-shu LI Guo-hua HAN He-xiang WANG Zhao-ping TANG Ru-ming HU Jing-zhu 

作者机构：Institute of SemiconductorsAcademia Sinica Institute of PhysicsAcademia.Sinica 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：1984年第1卷第1期

页      面：15-18页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

主　　题：donor neutral hydrostatic 

摘      要：Photoluminescence spectrum of Gap ( N, Te , Zn ) under hydrostatic pressure was measured at 77K. Pressure coefficients for Te donor level as well as energy levels of excitons bound to N, NN1, NN3, and neutral donor Te were obtained. The pressure shifts of these levels were discussed. The zero phonon line of free exciton in Gap was observed for the first time.