Growth and Morphology of β–FeSi_(2) Single Crystal with Chemical Vapor Transport

作     者：ZHAO Jian-hua LI Yan-chun LIU Ri-ping ZHANG Xiang-yi ZHOU Zhen-hua WANG Chao-ying XU Ying-fan WANG Wen-kui 赵建华;李延春;刘日平;张湘义;周镇华;王超英;许应凡;王文魁

作者机构：Institute of PhysicsChinese Academy of SciencesBeijing 100080 Institute of Materials Science and EngineeringYanshan UniversityQinhuangdao 066004 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：1999年第16卷第3期

页      面：208-210页

核心收录：

学科分类：08[工学] 080502[工学-材料学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

基　　金：Supported by the National Natural Science Foundation of China under Grant No.59889102 

主　　题：morphology. Crystal transport 

摘      要：Single crystals ofβ–FeSi_(2) have been grown from vapor by employing chemical vapor transport technique and using iodine as transport agent in a closed *** the experiment,β–FeSi_(2) single crystals with well-developed faces and edges have been observed on the silicon substrate,but no needlelike ones have been *** changes in the size and the geometric shape of the growth ampoule and temperature gradient are primary factors which result in the variation on β–FeSi_(2) single crystal morphology.