Improved Activation of Mg^(+) and P^(+) Dual Implantation into GaAs

作     者：SHEN Honglie ZHOU Zuyao XIA Guanqun ZOU Shichang 

作者机构：Ion Beam LaboratoryShanghai Institute of MetallurgyAcademia SinicaShanghai 200050 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：1991年第8卷第5期

页      面：225-228页

核心收录：

学科分类：08[工学] 080502[工学-材料学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

主　　题：technique resistance activation 

摘      要：Co-implantation of phosphorus was used to enhance the activation of the implanted magnesium in *** activations were observed in dually implanted samples by either furnace annealing or rapid thermal *** dose of 5×10^(14) cm^(-2) Mg^(+),an activation of 74%with a sheet resistance 216Ω/□was obtained for dual implant compared to the activation of 33%and sheet resistance of 367Ω/□for single implant after rapid thermal *** results suggest that the high carrier concentration can be obtained by this technique.