CNx Films Deposited by Laser Ablation of Graphite Under Low Energy Nitrogen-Ion Beam Bombardment
作者机构:State Key Joint Laboratory for Material Modification by LaserIon and Electron BeamsFudan UniversityShanghai 200433
出 版 物:《Chinese Physics Letters》 (中国物理快报(英文版))
年 卷 期:1994年第11卷第7期
页 面:461-464页
核心收录:
学科分类:08[工学] 080502[工学-材料学] 0805[工学-材料科学与工程(可授工学、理学学位)]
摘 要:Deposition of CN_(x) thin films on Si(111)has been performed by laser ablation of graphite under a low-energy nitrogen ion beam *** with a maximum N-concentration of 34%are *** N species is found to be relatively constant along the depth of films.X-ray spectroscopy data confirm the existence of covalent C-N *** structure has been detected in the amorphous matrix of the *** hardness tests indicate that the films are relatively hard and adhesive.