Effect of Si/Si_(1-y)C_(y)/Si Barriers on the Characteristics of Sil-xGex/Si Resonant Tunneling Structures

作     者：HAN Ping CHENG Xue-Mei 韩平;程雪梅

作者机构：Department of PhysicsNanjing UniversityNanjing 210093 Masao SakurabaYoung-Cheon JeongTakashi MatsuuraJunichi Murota Research Institute of Electrical CommunicationTohoku University 2-1-1 KatahiraAoba-kuSendai 980-8577Japan 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2000年第17卷第11期

页      面：844-846页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：Supported by the National High Technology Research and Development Project of China(No.863-307-1620) 

主　　题：Si/Si resonant Tunnel 

摘      要：P-type double barrier resonant tunneling diodes (RTD) with the single Si0.6Ge0.4 quantum well and double Si0.6Ge0.4spacer have been realized by using an ultra clean low-pressure chemical vapor deposition system. The effect of Si_(1-y)C_(y) layer on the characteristics of the devices was shown by comparing the current-voltage (I-V) characteristics of RTD’s of the barriers of Si layers with that of Si/ Si_(1-y)C_(y)/Si structures. The peak voltage was gradually increased and the resonant current decreased obviously with increasing C content in the Si/ Si_(1-y)C_(y)/Si barriers. The origin of the phenomena above can be attributed to the C related deep acceptor levels in the Si/ Si_(1-y)C_(y)/Si barriers. The possible mechanism for the observed I- V characteristics was shown more clearly by increasing C content to 3% and changing the thicknesses of Si and Si_(1-y)C_(y) layers in the Si/Si_(1-y)C_(y)/Si barriers.