A Metal Oxide Heterostructure for Resistive Random Access Memory Devices

作     者：廖昭亮 陈东敏 LIAO Zhao-Liang;CHEN Dong-Min

作者机构：Department of Physics and AstronomyLouisianan State UniversityBaton RougeLA 70810USA Academy for Advanced Interdisciplinary StudiesPeking UniversityBeijing 100871 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2013年第30卷第4期

页      面：197-200页

核心收录：

学科分类：08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0704[理学-天文学] 

基　　金：the Chinese Academy of Sciences(No KJCX2-SW-W26) the National Natural Science Foundation of China under Grant No 90406017 U.S.DOE under Grant No DOE DE-SC0002136 

主　　题：resistance vacancy resistivity 

摘      要：We propose and investigate a metal oxide heterostructure(MOH)based resistive switching(RS)*** driving mechanism of resistive switching(RS)in an MOH is more directly related to oxygen ion/vacancy migration around their *** performance of an MOH-based RS device depends on the oxygen mobility,oxygen vacancy concentration as well as its relation to the *** enhanced ratio of high resistance state to low resistance state can be achieved if the two involved metal oxides are mutually complemental metal oxides in which one of them has larger resistivity with increasing concentration of vacancy while the other one is the reverse.