Raman Analysis of a Crystalline SiC Sample Prepared from Carbon-Saturated Melt of Silicon
作者机构：Department of Applied ElectronicsXi’an University of TechnologyXi’an 710048
出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)
年 卷 期：2001年第18卷第8期
页 面：1123-1125页
核心收录：
学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学]
基 金：Supported by the National Natural Science Foundation of China under Grant No.69876030
摘 要：Crystalline SiC samples were prepared in solidification of silicon melt saturated by carbon solved from the inner wall of a graphite *** Crystalline structure of the samples was analysed in Raman spectroscopy and confirmed as 3C-SiC both in x-ray diffraction and x-ray photoelectron spectroscopy(XPS).The Raman spectra of the samples present a strong sharp peak located at 796.3 cm^(-1) with a full width at half maximum about 6 cm^(-1) and three weak peaks broadened around 1525.6,1631.4 and 1719.1 cm^(-1),*** former belongs to the transverse optical phonons of 3C-SiC,while the latter can be attributed to the second-order ***,the longitudinal optical mode of 3C-SiC has not been found for our *** additional broadened peak at 532.2 cm^(-1) may imply the existence of some lattice defect in the samples,which is related to nitrogen introduced unintentionally into the lattice in the growth process and confirmed in XPS of N 1s binding energy centered at 400.9 eV.
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