Enhanced Transverse Magnetoresistive Effect in Semiconducting Diamond Filins
作者机构：Department of Applied PhysicsChongqing UniversityChongqing 400044
出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)
年 卷 期：2000年第17卷第5期
页 面：370-372页
核心收录：
学科分类：08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0704[理学-天文学]
基 金：Supported by the National Natural Science Foundation of China under Grant No.19904018
主 题：intensity resistance films
摘 要：A very large magnetoresistive effect in both homoepitaxial and heteroepitaxial semiconduding diamond films by chemical vapor deposition has been *** changes in the resistance of the films strongly depend on both magnetic Held intensity and geometric form of the *** effect of disk structure is greater than that of stripe type samples,also variation in the resistance of homoepitaxial diamond Blms is greater than that of heteroepit&xial diamond *** resistance of homoepitaxial diamond films with the disk structure is increased by a factor of 2.1 at room temperature under magnetic Geld intensity of 5 T,but only 0.80 for heteroepitaxial diamond films.
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