Temperature Distribution in Ridge Structure InGaN Laser Diodes and Its Influence on Device Characteristics

作     者：李德尧 黄永箴 张书明 种明 叶晓军 朱建军 赵德刚 陈良惠 杨辉 梁骏吾 Li Deyao;Huang Yongzhen;Zhang Shuming;Chong Ming;Ye Xiaojun;Zhu Jianjun;Zhao Degang;Chen Lianghui;Yang Hui;Liang Junwu

作者机构：中国科学院半导体研究所集成光电子学国家重点联合实验室北京100083 中国科学院半导体研究所纳米光电子学实验室北京100083 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2006年第27卷第3期

页      面：499-505页

核心收录：

学科分类：080901[工学-物理电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080401[工学-精密仪器及机械] 0804[工学-仪器科学与技术] 0803[工学-光学工程] 

基　　金：国家高技术研究发展计划资助项目(批注号:2001AA313100)~~ 

主　　题：InGaN laser diodes ridge waveguide thermal simulation threshold current slope efficiency 

摘      要：Time-dependent thermal simulation of ridge-geometry InGaN laser diodes is carried out with a two-dimensional model. A high temperature in the waveguide layer and a large temperature step between the regions under and outside the ridge are generated due to the poor thermal conductivity of the sapphire substrate and the large threshold current and voltage. The temperature step is thought to have a strong influence on the characteristics of the laser diodes. Time-resolved measurements of light-current curves,spectra, and the far-field pattern of the InGaN laser diodes under pulsed operation are performed. The results show that the thermal lensing effect improves the confinement of the higher order modes and leads to a lower threshold current and a higher slope efficiency of the device while the high temperature in the active layer results in a drastic decrease in the slope efficiency.