Graded index separate confinement heterostructure transistor laser:analysis of various confinement structures

作     者：Mohammad Hosseini Hassan Kaatuzian Iman Taghavi 

作者机构：Photonics Research LaboratoryElectrical Engineering DepartmentAmirkabir University of Technology Electrical and Computer Engineering DepartmentGeorgia Institute of Technology 

出 版 物：《Chinese Optics Letters》 (中国光学快报（英文版）)

年 卷 期：2017年第15卷第6期

页      面：92-96页

核心收录：

学科分类：0808[工学-电气工程] 080901[工学-物理电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080401[工学-精密仪器及机械] 0804[工学-仪器科学与技术] 0805[工学-材料科学与工程（可授工学、理学学位）] 0803[工学-光学工程] 0702[理学-物理学] 

主　　题：confinement transistor continuity lifetime bandwidth capture utilized instead separate drift 

摘      要：A new configuration of the confinement structure is utilized to improve optoelectronic performance, including threshold current, ac current gain, optical bandwidth, and optical output power of a single quantum well transistor laser. Considering the drift component in addition to the diffusion term in electron current density, a new continuity equation is developed to analyze the proposed structures. Physical parameters, including electron mobility, recombination lifetime, optical confinement factor, electron capture time, and photon lifetime, are calculated for new structures. Based on solving the continuity equation in separate confinement heterostructures, the threshold current reduces 67%, the optical output power increases 37%, and the-3 d B optical bandwidth increases to 21 GHz（compared to 19.5 GHz in the original structure） when the graded index layers of AlξGa1-ξAs（ξ：0.05 → 0 in the left side of quantum well, ξ：0 → 0.02 in the right side of quantum well） are used instead of uniform Ga As in the base region.