Structural and Electrical Characterization of GaN Thin Films on Si(100)

作     者：Gajanan Niranjan Chaudhari Vijay Ramkrishna Chinchamalatpure Sharada Arvind Ghosh 

作者机构：不详 

出 版 物：《American Journal of Analytical Chemistry》 (美国分析化学（英文）)

年 卷 期：2011年第2卷第8期

页      面：984-988页

学科分类：07[理学] 0809[工学-电子科学与技术（可授工学、理学学位）] 070205[理学-凝聚态物理] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0702[理学-物理学] 

主　　题：Electron Beam Evaporation Technique GaN Thin Film C-V I-V 

摘      要：The Gallium Nitride (GaN) layers grown on silicon substrates by electron beam evaporation technique. X- ray diffraction revealed that polycrystalline GaN was obtained indicating the enhance crystallinity of the films with annealing temperature at 600oC. Crystalline quality of the GaN films was determined by Scanning Electron Microscopy (SEM). The crystalline size increases with increasing annealing temperature. The fab- ricated MIS structures were characterized using Capacitance-Voltage (C-V) measurements, the capacitance remains nearly constant over a large range in higher negative as well as over a large range in higher positive gate voltages and Current-Voltage (I-V) measurements shows low forward and reverse current possibly due to high density defect formation in the thin layer of gallium nitride during its *** film is characterized by X-Ray photoelectron spectroscopy (XPS). The XPS spectra show that formation of pure GaN with- out presence of elemental gallium and Ga2O3 in this film.