Dual material gate doping-less tunnel FET with hetero gate dielectric for enhancement of analog/RF performance

作     者：Sunny Anand R.K.Sarin 

作者机构：Department of Electronics and Communication Engineering Dr. B. R. Ambedkar National Institute of Technology JalandharPunjab India 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2017年第38卷第2期

页      面：31-37页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

主　　题：hetero gate dielectric material dual material gate doping less TFET average subthreshold slope analog FOM 

摘      要：In this paper, charge-plasma-based tunnel FET is proposed by employing dual material gate with hetero gate dielectric technique and it is named hetero-dielectric dual material gate doping-less TFET（HD_DMG_DLTFET）. It is compared with conventional doping-less TFET（DLTFET） and dual material gate doping-less TFET（DMG_DLTFET） on the basis of analog and RF performance. The HD_DMG_DLTFET provides better ON state current（I_（ON） =94 μA/ μm）, I_（ON）/I_（OFF）（≈1.36×10^（13））, point（≈3 mV/dec） and average subthreshold slope（AV-SSD40.40 mV/dec）. The proposed device offers low total gate capacitance（C_（gg）/ along with higher drive current. However, with a better transconductance（g_m） and cut-off frequency（f_T）, the HD_DMG_DLTFET can be a good candidate for RF circuitry. The early voltage（V_（EA）/ and output conductance（gd/ are also moderate for the proposed device with comparison to other devices and therefore can be a candidate for analog *** all these simulation results and their study, it is observed that HD_DMG_DLTFET has improved analog/RF performance compared to DLTFET and DMG_DLTFET.