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检索条件"作者=R.K.Sarin"
49197 条 记 录,以下是1-10 订阅
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Direct tunneling gate current model for symmetric double gate junctionless transistor with SiO_2/high-k gate stacked dielectric
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Journal of Semiconductors 2016年 第3期37卷 37-41页
作者: S.Intekhab Amin r.k.sarin Department of Electronics and Communication Engineering Dr.B.R.Ambedkar National Institute of Technology Jalandhar
A junctionless transistor is emerging as a most promising device for the future technology in the decananometer regime. To explore and exploit the behavior completely, the understanding of gate tunneling current is of... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
The impact of gate misalignment on the analog performance of a dual-material double gate junctionless transistor
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Journal of Semiconductors 2015年 第9期36卷 47-53页
作者: S.Intekhab Amin r.k.sarin Department of Electronics and Communication Engineering Dr.B.R.Ambedkar National Institute of Technology Jalandhar
The analog performance of gate misaligned dual material double gate junctionless transistor is demonstrated for the first time. The cases considered are where misalignment occurs towards source side and towards drain ... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
PAPr reduction in Massive MU-MIMO-OFDM Systems Using the Proximal Gradient Method
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Journal of Communications and Information Networks 2019年 第1期4卷 88-94页
作者: Davinder Singh r.k.sarin Department of Electronics and Communication Engineering Dr.B.R.Ambedkar National Institute of TechnologyJalandharPunjabIndia-144011
In this paper,we address the issue of peak-to-average power ratio(PAPr)reduction in large-scale multiuser multiple-input multiple-output(MU-MIMO)orthogonal frequency-division multiplexing(OFDM)*** reduction and the mu... 详细信息
来源: 维普期刊数据库 维普期刊数据库 评论
Dual material gate doping-less tunnel FET with hetero gate dielectric for enhancement of analog/rF performance
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Journal of Semiconductors 2017年 第2期38卷 31-37页
作者: Sunny Anand r.k.sarin Department of Electronics and Communication Engineering Dr. B. R. Ambedkar National Institute of Technology JalandharPunjab India
In this paper, charge-plasma-based tunnel FET is proposed by employing dual material gate with hetero gate dielectric technique and it is named hetero-dielectric dual material gate doping-less TFET(HD_DMG_DLTFET). I... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
Performance analysis of charge plasma based dual electrode tunnel FET
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Journal of Semiconductors 2016年 第5期37卷 35-42页
作者: Sunny Anand S.Intekhab Amin r.k.sarin Department of Electronics and Communication Engineering Dr.B.R.Ambedkar National Institute of Technology Jalandhar
This paper proposes the charge plasma based dual electrode doping-less tunnel FET (DEDLTFET). The paper compares the device performance of the conventional doping-less TFET (DLTFET) and doped TFET (DGTFET). DEDL... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
Call for accurate statistical data to solve snakebite conundrum in India
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Asian Pacific Journal of Tropical Medicine 2020年 第4期13卷 141-142页
作者: Saurabh Bhargava kiran kumari r.k.sarin rajvinder Singh Department of Genetics M.D.UniversityRohtak-124001 HaryanaIndia Andhra Pradesh Forensic Science Laboratory MangalgiriGunturAndhra Pradesh-522004India
After a prolonged debate and discussion,the World Health Organization(WHO)relisted'snakebite'under Category'A'of'Neglected Tropical Diseases'(NTDs)in June 2017 hoping to diminish its burden on ***,in March 2009,WHO ad... 详细信息
来源: 维普期刊数据库 维普期刊数据库 评论
Unleashing the Power of Multi-Agent reinforcement Learning for Algorithmic Trading in the Digital Financial Frontier and Enterprise Information Systems
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Computers, Materials & Continua 2024年 第8期80卷 3123-3138页
作者: Saket sarin Sunil k.Singh Sudhakar kumar Shivam Goyal Brij Bhooshan Gupta Wadee Alhalabi Varsha Arya Chandigarh College of Engineering and Technology Chandigarh160019India Department of Computer Science and Information Engineering Asia UniversityTaichung413Taiwan Symbiosis Centre for Information Technology(SCIT) Symbiosis International UniversityPune411057India Center for Interdisciplinary research University of Petroleum and Energy Studies(UPES)Dehradun248007India Department of Computer Science Immersive Virtual Reality Research GroupKing Abdulaziz UniversityJeddah21589Saudi Arabia Department of Business Administration Asia UniversityTaichung413Taiwan Department of Electrical and Computer Engineering Lebanese American UniversityBeirut11022801Lebanon UCrD Chandigarh UniversityChandigarh140413India
In the rapidly evolving landscape of today’s digital economy,Financial Technology(Fintech)emerges as a trans-formative force,propelled by the dynamic synergy between Artificial Intelligence(AI)and Algorithmic *** in-... 详细信息
来源: 维普期刊数据库 维普期刊数据库 评论
Classification of Conversational Sentences Using an Ensemble Pre-Trained Language Model with the Fine-Tuned Parameter
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Computers, Materials & Continua 2024年 第2期78卷 1669-1686页
作者: r.Sujatha k.Nimala Department of Networking and Communications SRM Institute of Science and TechnologyKattankulathurChengalpattuTamilnadu603203India
Sentence classification is the process of categorizing a sentence based on the context of the *** categorization requires more semantic highlights than other tasks,such as dependence parsing,which requires more syntac... 详细信息
来源: 维普期刊数据库 维普期刊数据库 评论
Effect of cylinder wall parameters on the final packing density of mono-disperse spheres subject to three-dimensional vibrations Author links open overlay panel
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Particuology 2024年 第8期91卷 211-225页
作者: Jack r.Grogan Andrei L.Nicuşan Christopher r.k.Windows-Yule School of Chemical Engineering The University of BirminghamEdgbastonBirminghamB152TTUK
Achieving densely packed particles is desirable within the industries of ceramics,pharmaceuticals,defence and additive *** this work,we use the discrete element method(DEM)to determine the effect of wall parameters on... 详细信息
来源: 维普期刊数据库 维普期刊数据库 评论
Covalent Bond Based Android Malware Detection Using Permission and System Call Pairs
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Computers, Materials & Continua 2024年 第3期78卷 4283-4301页
作者: rahul Gupta kapil Sharma r.k.Garg Department of Information Technology Delhi Technological UniversityNew Delhi110042India Department of Mechanical Engineering Deenbandhu Chhotu Ram University of Science and TechnologyMurthal131039India
The prevalence of smartphones is deeply embedded in modern society,impacting various aspects of our *** versatility and functionalities have fundamentally changed how we communicate,work,seek entertainment,and access ... 详细信息
来源: 维普期刊数据库 维普期刊数据库 评论