Ultra-low temperature radio-frequency performance of partially depleted silicon-on-insulator n-type metal-oxide-semiconductor field-effect transistors with tunnel diode body contact structures

作     者：吕凯 陈静 黄瑜萍 刘军 罗杰馨 王曦 

作者机构：State Key Laboratory of Functional Materials for InformaticsShanghai Institute of Microsystem and Information Technology University of Chinese Academy of Sciences Key Laboratory for RF Circuits and Systems of Ministry of Education Hangzhou Dianzi University 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2016年第25卷第11期

页      面：652-655页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0704[理学-天文学] 

主　　题：depleted immense representing tunnel partially finger floating analog helium insulator 

摘      要：Radio-frequency（RF） characteristics under ultra-low temperature of multi-finger partially depleted silicon-oninsulator（PD SOI） n-type metal-oxide-semiconductor field-effect transistors（nMOSFETs） with tunnel diode body-contact（TDBC） structure and T-gate body-contact（TB） structure are investigated in this *** operating at 77 K,TDBC device suppresses floating-body effect（FBE） as well as the TB *** TB device and TDBC device,cut-off frequency（fT） improves as the temperature decreases to liquid-helium temperature（77 K） while that of the maximum oscillation frequency（/max） is opposite due to the decrease of the unilateral power *** operating under 77 K,fT and f（max） of TDBC device reach to 125 GHz and 77 GHz,representing 8%and 15% improvements compared with those of TB device,respectively,which is mainly due to the lower parasitic resistances and *** results indicate that TDBC SOI MOSFETs could be considered as promising candidates for analog and RF applications over a wide range of temperatures and there is immense potential for the development of RF CMOS integrated circuits for cryogenic applications.