AlGaAs high-power short-wavelength superluminescent integrated source

作     者：赵永生,杜国同,韩伟华,付艳萍,李雪梅,宋俊峰,姜秀英,高鼎三,G.Devane,K.A.Stair,R.P.H.Chang 

作者机构：Department of Electronic Engineering and State Key Laboratory on Integrated Optoelectronics Jilin University Changchun 130023 China Department of Electronic Engineering and State Key Laboratory on Integrated Optoelectronics Jilin University Changchun 130023 China Department of Electronic Engineering and State Key Laboratory on Integrated Optoelectronics Jilin University Changchun 130023 China Department of Electronic Engineering and State Key Laboratory on Integrated Optoelectronics Jilin University Changchun 130023 China Department of Electronic Engineering and State Key Laboratory on Integrated Optoelectronics Jilin University Changchun 130023 China Department of Electronic Engineering and State Key Laboratory on Integrated Optoelectronics Jilin University Changchun 130023 China Department of Electronic Engineering and State Key Laboratory on Integrated Optoelectronics Jilin University Changchun 130023 China Department of Electronic Engineering and State Key Laboratory on Integrated Optoelectronics Jilin University Changchun 130023 China Northwestern University Evanston IL 60208-3108 USA Northwestern University Evanston IL 60208-3108 USA Northwestern University Evanston IL 60208-3108 USA 

出 版 物：《Progress in Natural Science:Materials International》 (自然科学进展·国际材料(英文))

年 卷 期：1998年第5期

页      面：52-56页

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：Project supported by the National Natural Science Foundation of China (Grant No. 6957708) 

主　　题：superluminescent diode optical amplifier integrated source. 

摘      要：In order to solve the problem in the conventional superluminescent diode (SLD), i. e. its output power is not high enough for some applications, a monolithic superluminescent source by integrating SLD with the tapered semiconductor amplifier has been designed and fabricated. An AlGaAs heterostructure wafer, gain guide of oxide stripe and a way of direct coupling were adopted. The experimental results show that the superluminescent output of SLD can be amplified for about 22 dB by the tapered optical amplifier. A maximum output power of 580 mW has been obtained under Dalsed condition.