InP导电机制的正电子湮灭和相关电学测量研究(英文)

作     者：韩玉杰 Han Yujie(Hebei Semiconductor Research Institute)

作者机构：河北半导体研究所 

出 版 物：《固体电子学研究与进展》 (Research & Progress of Solid State Electronics)

年 卷 期：1989年第4期

页      面：434-435页

核心收录：

学科分类：1002[医学-临床医学] 100214[医学-肿瘤学] 10[医学] 

主　　题：电学测量 InP 导电机制 electrically intimate microwave forbidden usefulness optoelectronic defects 

摘      要： InP and its alloys are of increasing interest due to their usefulness in microwave and optoelectronic devices. For the development of an InP-based technology an intimate understanding of the material properties is required. These properties are the nature of defects which give rise to electrically active states in the forbidden gap.