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Nano-Micro Letters 2025年第4期17卷 290-290页

作者： Jiaolong Liu Siyu Zhang Dan Qu Xuejiao Zhou Moxuan Yin Chenxuan Wang Xuelin Zhang Sichen Li Peijun Zhang Yuqi Zhou Kai Tao Mengyang Li Bing Wei Hongjing Wu School of Physics Xidian UniversityXi’an 710071People’s Republic of China School of Advanced Materials and Nanotechnology State Key Discipline Laboratory of Wide Band Gap Semiconductor TechnologyXidian UniversityXi’an 710071People’s Republic of China School of Microelectronics Xidian UniversityXi’an 710071People’s Republic of China School of Telecommunication Engineering Xidian UniversityXi’an 710071People’s Republic of China MOE Key Laboratory of Material Physics and Chemistry Under Extraordinary School of Physical Science and TechnologyNorthwestern Polytechnical UniversityXi’an 710072People’s Republic of China The Ministry of Education Key Laboratory of Micro and Nano Systems forAerospace School of Mechanical EngineeringNorthwestern PolytechnicalUniversityXi’an 710072People’s Republic of China

Correction to:Nano-Micro Lett.(2025)17:24 https://***/10.1007/s40820-024-01515-0 Following publication of the original article[1],the authors reported the author list needed to be updated because the last three author... 详细信息

关键词： Strong Polarization defects

Atomically precise coinage metal nanoclusters with defects in catalysis

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Nano Research 2025年第2期18卷 64-79页

作者： Zhijuan Liu Xiao-Meng Yang Yanyong Wang Shuangyin Wang Henan Key Laboratory of Crystalline Molecular Functional Materials and College of ChemistryZhengzhou UniversityZhengzhou 450001China State Key Laboratory of Chem/Bio-sensing and Chemometrics Cllege of Chemistry and Chemical EngineeringHunan UniversityChangsha 410082China

Recent advancements in defect engineering have significantly improved catalysis by modulating the electronic structure and enhancing the intrinsic abilities of ***,establishing a clear structure-property relationship at the atomic level remains a challenge due to the inherent polydispersity of catalysts,which hinders a comprehensive understanding of the defect *** precise metal nanoclusters can serve as model catalysts because of their perfect monodispersity and well-defined ***,the understanding about defects in atomically precise metal nanoclusters is *** review encompasses various types of defects(such as heteroatom incorporation,vacancies,ligand deficiencies,etc.)in atomically precise coingage metal clusters,characterization methods,and their applications within the realm of *** the conclusion of this review,we propose several prospects,including the controllable construction of defects,further enhancement of the performance of clusters with defects,and monitoring the in-situ evolution of defects in clusters during *** purpose of this review is to deepen the understanding of defects in atomically precise clusters,establish the relationship between defect structure and catalytic performance,and offer valuable insights for the designing and developing of efficient defect-rich cluster catalysts.

关键词： defects atomically precise metal nanoclusters catalysis

defects and electrical properties in Al-implanted 4H-SiC after activation annealing

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Chinese Physics B 2019年第10期28卷 441-446页

作者： Yi-Dan Tang Xin-Yu Liu Zheng-Dong Zhou Yun Bai Cheng-Zhan Li High-Frequency High-Voltage Devices and Integrated Circuits Research and Development Center Institute of Microelectronics of Chinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 100049China Zhuzhou CRRC Times Electric Co. LtdZhuzhou 412001China

The defects and electrical properties in Al-implanted 4 H-SiC after activation annealing(1600℃-1800℃) are investigated. High temperature annealing can reduce the ion implantation-induced damage effectively, but it may induce extended defects as well, which are investigated by using Rutherford backscattering spectroscopy(RBS/C), secondary ion mass spectroscopy(SIMS), and transmission electron microscopy(TEM) analyses. According to the ratio of the channeled intensity to the random intensity in the region just below the surface scattering peak(Xmin) and RBS/C analysis results, the ion implantation-induced surface damages can be effectively reduced by annealing at temperatures higher than 1700℃,while the defects near the bottom of the ion-implanted layer cannot be completely annealed out by high temperature and long time annealing process, which is also demonstrated by SIMS and TEM analyses. Referring to the defect model and TEM analyses, an optimized annealing condition can be achieved through balancing the generation and elimination of carbon vacancies in the ion implanted layers. Furthermore, the electrical and surface properties are also analyzed, and the hole concentration, mobility, and resistivity are obtained through the Hall effect. The optimized activation annealing conditions of 1800℃/5 min are achieved, under which the lower defects and acceptable electrical properties are obtained.

关键词： Al-implanted 4H-SiC activation annealing extended defects carbon vacancies

defects-rich MgFe LDH:A high-capacity adsorbent for methyl orange wastewater

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Chinese Journal of Chemical Engineering 2024年第10期74卷 63-73页

作者： Chunmei Zhu Liting Zhang Chenyuan Cui Xin Lian Long Qu Bai He Guoyuan Yuan Jian Feng Siwei Xiang Bo Yu School of Chemistry and Chemical Engineering Chongqing University of Science and TechnologyChongqing 401331China Research Center of Smart Environmental Analysis Chongqing Institute of Green and Intelligent TechnologyChinese Academy of SciencesChongqing 400714China

Dye pollution is a common pollutant in wastewater that poses a serious threat to human *** double hydroxide(LDH)is a commonly used adsorbent for dye ***,its adsorption efficiency is significantly limited by the limited adsorption active sites of the *** this paper,a defects-rich MgFe LDH adsorbent for anionic dye wastewater was synthesized by a simple hydrothermal method and alkaline *** analytical techniques,such as XRD,FT-IR,SEM,TEM,XPS,and N2 adsorption-desorption isotherm,were used to verify the chemical composition and surface characteristics of the materials,and the effects of pH,temperature,and contact time on the adsorption effect of methyl orange and the adsorption mechanism were *** etching of Al and Zn in the laminate generated defects that expose unsaturated coordination centers and create abundant adsorption sites,which can electrostatically attract and coordinate with dye *** 25℃,the adsorption capacity of MgFe LDH with Al etched and MgFe LDH with Zn etched for methyl orange dye reached 1722 mg·g^(-1 ) and 1685 mg·g^(-1 ),respectively,much higher than that of MgFe LDH(544 mg·g^(-1 )).This work provides a promising method for the removal of dye wastewater by adsorption and a new idea for the design and development of high-performance dye wastewater adsorbents.

关键词： MgFe LDH Methyl orange Alkaline etching defects Adsorption

defects and doping engineering towards high performance lead-free or lead-less perovskite solar cells

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Journal of Energy Chemistry 2022年第5期31卷 420-438页

作者： Wenying Cao Zhaosheng Hu Zhenhua Lin Xing Guo Jie Su Jingjing Chang Yue Hao State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of MicroelectronicsXidian UniversityXi’an 710071ShaanxiChina Advanced Interdisciplinary Research Center for Flexible Electronics Xidian UniversityXi’an 710071ShaanxiChina

Up to now, perovskite solar cells(PSCs) have reached a certified 25.5% efficiency. As a promising photo-electric material, the metal halide perovskite possesses many outstanding properties such as tunable bandgap, long diffusion length, high absorption coefficient and carrier mobility. In spite of these remarkable properties, defects are inevitable during the solution processing. Therefore, many efforts have been made to reduce defects in perovskite films and thus improve the performance of devices. Among them,substitution or doping engineering is one of the most studied methods. Meanwhile, due to the poor stability of the organic-inorganic hybrid perovskite and the toxicity of Pb-based perovskite materials, all inorganic perovskite and lead-less or lead-free perovskite have emerged as promising materials. Here,we focus on the defect engineering especially substitutions on different sites in an ABX_(3) structure. The particular attention is devoted towards lead-less or lead-free perovskites, and we discuss several common elements or groups used to partially replace Pb^(2+). It is noted that proper elemental doping at different sites is an important guarantee for obtaining high-performance lead-less or lead-free PSCs.

关键词： Perovskite defects Doping engineering Lead-free Lead-less Solar cells

defects boost graphitization for highly conductive graphene films

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National Science Review 2023年第7期10卷 172-182页

作者： Qing Zhang Qinwei Wei Kun Huang Zhibo Liu Wei Ma Zehui Zhang Yanfeng Zhang Hui-Ming Cheng Wencai Ren Shenyang National Laboratory for Materials Science Institute of Metal Research Chinese Academy of Sciences School of Materials Science and Engineering University of Science and Technology of China School of Materials Science and Engineering Peking University Shenzhen Institute of Advanced Technology Chinese Academy of Sciences

Fabricating highly crystalline macroscopic films with extraordinary electrical and thermal conductivities from graphene sheets is essential for applications in electronics,telecommunications and thermal ***-temperature graphitization is the only method known to date for the crystallization of all types of carbon materials,where defects are gradually removed with increasing ***,when using graphene materials as precursors,including graphene oxide,reduced graphene oxide and pristine graphene,even lengthy graphitization at 3000℃ can only produce graphene films with small grain sizes and abundant structural disorders,which limit their ***,we show that high-temperature defects substantially accelerate the grain growth and ordering of graphene films during graphitization,enabling ideal AB stacking as well as a 100-fold,64-fold and 28-fold improvement in grain size,electrical conductivity and thermal conductivity,respectively,between 2000℃ and 3000℃.This process is realized by nitrogen doping,which retards the lattice restoration of defective graphene,retaining abundant defects such as vacancies,dislocations and grain boundaries in graphene films at a high *** this approach,a highly ordered crystalline graphene film similar to highly oriented pyrolytic graphite is fabricated,with electrical and thermal conductivities(～2.0×10～4 S cm-1;～1.7×10～3 W m-1K-1) that are improved by about 6-and 2-fold,respectively,compared to those of the graphene films fabricated by graphene *** graphene film also exhibits a superhigh electromagnetic interference shielding effectiveness of ～90 dB at a thickness of 10 μm,outperforming all the synthetic materials of comparable thickness including MXene *** work not only paves the way for the te chnological application of highly conductive graphene films but also provides a general strategy to efficiently improve the synthesis and properties of other carbon materials such as graphe

关键词： graphene film defects graphitization electrical and thermal conductivity thermal management and EMI shielding

defects mediated ferromagnetism in a V-doped 6H-SiC single crystal

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Chinese Physics B 2012年第6期21卷 494-497页

作者：卓世异刘学超熊泽闫文盛忻隽杨建华施尔畏 Shanghai Institute of Ceramics Chinese Academy of SciencesShanghai 200050China Graduate University of the Chinese Academy of Sciences Beijing 100049China National Synchrotron Radiation Laboratory University of Science and Technology of ChinaHefei 230029China

Undoped and V-doped 6H-SiC single crystals have been grown by the physical vapor transport *** V concentration is determined to be 3.76×10^17 at/cm^3 and 6.14×10^17 at/cm^3 by secondary ion mass spectrometry for low V-doped and high V-doped SiC samples,*** undoped 6H-SiC shows diamagnetism,while the V-doped 6H-SiC exhibits weak *** lower V-doped sample shows stronger ferromagnetism compared to that of the higher V-doped ***,the structural characterization indicates that the lower V-doped SiC has a relative poor crystalline *** is found that both V dopants and defects are essential for introducing ferromagnetic exchange in V-doped SiC single crystals.

关键词： V-doping 6H-SiC defects magnetic materials

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defects in CVDZnS

Rare Metals 2011年第4期30卷 387-391页

作者： FU Ligang LU Fanxiu WANG Xuewu WEI Naiguang School of Materials Science and Engineering University of Science and Technology Beijing Beijing 100083 China Beijing Guojing Infrared Optical Technology Co. Ltd. General Research Institute for Nonferrous Metals Beijing 100088 China

defects seriously influence the optical properties and mechanical properties of CVDZnS. The deposition technique was introduced and experiment methods such as SEM, TEM and OM were adopted to study the defects： hexagonal phase, abnormally large grains, micro-cracks, micro-pores and impurities. The microstructures of these defects were observed, and the formation mechanisms of these defects were analyzed. Hexagonal ZnS as an impurity causes anisotropy in different directions with different refraction indexes and increases the scattering of CVDZnS. Increasing the deposition temperature can inhibit the formation of the hexagonal phase. The main reason for the growth of abnormaUy large grains in CVDZnS is high deposition rate. The lower deposition temperature increases growth stress in CVDZnS, which consequently results in the bowing of CVDZnS plates, and introduces microscopic defects such as grain blending and micro-cracks in the crystal. Micro-pores and impurities are induced by high reactant concentration in the local deposition chamber, which can be avoided by improving the gas flowing so as to make the concentration more uniform.

关键词： zinc sulfide chemical vapor deposition (CVD) defects microstructure

defects in La_2CuO_4 and La_(1.86)Sr_(0.14)CuO4 single crystals

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Rare Metals 2005年第1期24卷 71-75页

作者： YANGWei JIALiansuo CHENXiaolong WANGCong CenterofMaterialsPhysicsandChemistry SchoolofSciencesBeihangUniversityBeijing100083China InstituteofPhysicsandCenterforCondensedMatterPhysics ChineseAcademyofSciencesBeijing100080China

La2CuO4 and La1.86Sr0.14CuO4 single crystals were obtained by traveling solvent floating zone method. There were five kinds of defects in these single crystals: cracks, inclusions, gas bubbles, unhomogeneous distribution of Sr2+, and substructures. CH3COOH aqueous solution was used to etch these single crystals, and the etch-pit density was calculated. The fort-nation mechanism of these defects was discussed. It is suggested that the good preparation of raw materials and the stringent growth conditions play an important role in growing high quality single crystals.

关键词： defects TSFZ method etch-pit density

defects Engineering with Multiple Dimensions in Thermoelectric Materials

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Research 2020年第1期2020卷 1898-1920页

作者： Chenxi Zhao Zhou Li Tianjiao Fan Chong Xiao Yi Xie Hefei National Laboratory for Physical Sciences at Microscale CAS Center for Excellence in NanoscienceUniversity of Science&Technology of ChinaHefeiAnhui 230026China Institute of Energy Hefei Comprehensive National Science CenterHefeiAnhui 230031China

Going through decades of development,great progress in both theory and experiment has been achieved in thermoelectric *** the growing enhancement in thermoelectric performance,it is also companied with the complexation of defects induced in the materials.0D point defects,1D linear defects,2D planar defects,and 3D bulk defects have all been induced in thermoelectric materials for the optimization of thermoelectric *** the distinct characteristics of each type of defects,in-depth understanding of their roles in the thermoelectric transport process is of vital *** this paper,we classify and summarize the defect-related physical effects on both band structure and transport behavior of carriers and phonons when inducing different types of *** achievements in experimental characterization and theoretical simulation of defects are also summarized for accurately determining the type of defects serving for the design of thermoelectric ***,based on the current theoretical and experimental achievements,strategies engaged with multiple dimensional defects are reviewed for thermoelectric performance optimization.

关键词： materials defects defects