Defects in La_2CuO_4 and La_(1.86)Sr_(0.14)CuO4 single crystals

作     者：YANGWei JIALiansuo CHENXiaolong WANGCong 

作者机构：CenterofMaterialsPhysicsandChemistrySchoolofSciencesBeihangUniversityBeijing100083China InstituteofPhysicsandCenterforCondensedMatterPhysicsChineseAcademyofSciencesBeijing100080China 

出 版 物：《Rare Metals》 (稀有金属（英文版）)

年 卷 期：2005年第24卷第1期

页      面：71-75页

核心收录：

学科分类：080705[工学-制冷及低温工程] 080801[工学-电机与电器] 0808[工学-电气工程] 07[理学] 070205[理学-凝聚态物理] 08[工学] 0807[工学-动力工程及工程热物理] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0702[理学-物理学] 

基　　金：ThisworkisfinanciallysupportedbytheNationalNaturalScienceFoundationofChina(No.59925206) 

主　　题：defects TSFZ method etch-pit density 

摘      要：La2CuO4 and La1.86Sr0.14CuO4 single crystals were obtained by traveling solvent floating zone method. There were five kinds of defects in these single crystals: cracks, inclusions, gas bubbles, unhomogeneous distribution of Sr2+, and substructures. CH3COOH aqueous solution was used to etch these single crystals, and the etch-pit density was calculated. The fort-nation mechanism of these defects was discussed. It is suggested that the good preparation of raw materials and the stringent growth conditions play an important role in growing high quality single crystals.