Cathodoluminescence of Yellow and Blue Luminescence in Undoped Semi-insulating GaN and n-GaN

作     者：HOU Qi-Feng WANG Xiao-Liang XIAO Hong-Ling WANG Cui-Mei YANG Cui-Bai YIN Hai-Bo LI Jin-Min WANG Zhan-Guo 侯奇峰;王晓亮;肖红领;王翠梅;杨翠柏;殷海波;李晋闽;王占国

作者机构：Materials Science CenterInstitute of SemiconductorsChinese Academy of SciencesPO Box 912Beijing 100083 Key Laboratory of Semiconductor Materials ScienceChinese Academy of SciencesPO Box 912Beijing 100083 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2011年第28卷第3期

页      面：184-187页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：Supported by the Knowledge Innovation Project of Chinese Academy of Sciences(Nos YYYJ-0701-02,ISCAS2008T01,ISCAS2009L01 and ISCAS2009L02) the National Natural Sciences Foundation of China(Nos 60890193 and 60906006) and the National Basic Research Program of China(Nos 2006CB604905 and 2010CB327503) 

主　　题：GaN luminescence yellow 

摘      要：Yellow and blue luminescence in undoped GaN layers with different resistivities are studied by *** yellow and blue luminescence bands are observed in semi-insulating GaN,while in n-GaN the yellow luminescence and blue luminescence bands are very *** stronger yellow and blue luminescences in semi-insulating GaN are correlated to the higher edge-type dislocation *** scanning cathodoluminescence image reveals strong defect-related luminescence at the grain boundaries where the dislocations *** is found that the relative intensity of the blue luminescence band to the yellow luminescence band increases with the cathodoluminescence beam energies and is larger in n-GaN with a lower density of edge-type *** approximately 3.35eV shoulder next to the near-band-edge peak is observed in n-GaN but not in semi-insulating GaN.A redshift of the near-band-edge peak with cathodoluminescence beam energy is observed in both samples and is explained by internal absorption.