Improving the Quality of the Deteriorated Regions of Multicrystalline Silicon Ingots during General Solar Cell Processes

作     者：WU Shan-Shan WANG Lei YANG De-Ren 吴珊珊;汪雷;杨德仁

作者机构：State Key Laboratory of Silicon Materials and the Department of Materials Science and EngineeringZhejiang UniversityHangzhou 310027 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2011年第28卷第4期

页      面：163-166页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：Supported by the National Basic Research Program of China(973 Program)(No 2007CB613403) the Innovation Team Project of Zhejiang Province(2009R50005) the Fundamental Research Funds for the Central Universities,and Project of Science and Technology Department of Jiangxi Province 

主　　题：crystalline RTP Solar 

摘      要：The behavior of wafers and solar cells from the border of a multicrystalline silicon(mc-Si)ingot,which contain deteriorated regions,is *** is found that the diffusion length distribution of minority carriers in the cells is uniform,and high efficiency of the solar cells(about 16%)is *** is considered that the quality of the deteriorated regions could be improved to be similar to that of adjacent ***,it is indicated that during general solar cell fabrication,phosphorus gettering and hydrogen passivation could significantly improve the quality of deteriorated regions,while aluminum gettering by RTP could ***,it is suggested that the border of a me-Si ingot could be used to fabricate high efficiency solar cells,which will increase me-Si utilization effectively.