Simultaneous Formation of AlB 2 -Type and ThSi 2 -Type Nanoislands of Er Silicide by Using a Prepatterned Si(001) Substrate

作     者：LIU Bei-Bei CAI Qun 刘备备;蔡群

作者机构：State Key Laboratory of Surface Physics and Department of PhysicsFudan UniversityShanghai 200433 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2013年第30卷第9期

页      面：124-127页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：Supported by the Natural Science Foundation of Shanghai Science and Technology Committee 

主　　题：walls hexagonal template 

摘      要：We report the simultaneous growth of hexagonal AlB 2-phase and tetragonal ThSi 2-phase nanoislands of erbium silicide on the same silicon *** a new technique,the patterned Si(001)surface with pits in a reverse-pyramid shape and{111}sidewalls is taken as the substrate *** distribution of nanoislands reveals that the upward diffusion over surface steps plays an influential role on the location of ***{111}facets on the pit sidewalls actually provide growth symmetry for the hexagonal *** work paves the way for exploring the intrinsic electrical transport properties of metal-semiconductor nanocontacts.