Temperature- and voltage-dependent trap generation model in high-k metal gate MOS device with percolation simulation

作     者：徐昊 杨红 王艳蓉 王文武 罗维春 祁路伟 李俊峰 赵超 陈大鹏 叶甜春 

作者机构：Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Micro ElectronicsChinese Academy of Sciences 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2016年第25卷第8期

页      面：352-356页

核心收录：

学科分类：0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 070205[理学-凝聚态物理] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0702[理学-物理学] 

基　　金：supported by the National High Technology Research and Development Program of China(Grant No.SS2015AA010601) the National Natural Science Foundation of China(Grant Nos.61176091 and 61306129) the Opening Project of Key Laboratory of Microelectronics Devices&Integrated Technology,Institute of Micro Electronics of Chinese Academy of Sciences 

主　　题：high-k metal gate TDDB percolation theory kinetic Monte Carlo trap generation model 

摘      要：High-k metal gate stacks are being used to suppress the gate leakage due to tunneling for sub-45 nm technology *** reliability of thin dielectric films becomes a limitation to device manufacturing,especially to the breakdown *** this work,a breakdown simulator based on a percolation model and the kinetic Monte Carlo method is set up,and the intrinsic relation between time to breakdown and trap generation rate R is studied by TDDB *** is found that all degradation factors,such as trap generation rate time exponent m,Weibull slope β and percolation factor s,each could be expressed as a function of trap density time exponent α.Based on the percolation relation and power law lifetime projection,a temperature related trap generation model is *** validity of this model is confirmed by comparing with experiment *** other device and material conditions,the percolation relation provides a new way to study the relationship between trap generation and lifetime projection.