Fabrication and electrical properties of p-CuAlO_2/(n-, p-)Si heterojunctions

作     者：吴素贞 邓赞红 董伟伟 邵景珍 方晓东 

作者机构：Anhui Provincial Key Laboratory of Photonic Devices and Materials Anhui Institute of Optics and Fine MechanicsChinese Academy of Sciences Key Laboratory of Novel Thin Film Solar CellsChinese Academy of Sciences 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2014年第35卷第4期

页      面：32-36页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：supported by the National Natural Science Foundation of China(Nos.51172237 61306083) 

主　　题：CuAIO2 heterojunction current-voltage characteristic 

摘      要：CuA1O2 thin films have been prepared by the chemical solution deposition method on both n-Si and p-Si substrates. X-ray diffraction analysis indicates that the obtained CuA1O2 films have a single delafossite structure. The current transport properties of the resultant p-CuA1O2/n-Si and p-CuA1O2/p-Si heterojunctions are investigated by current-voltage measurements. The p-CuA1O2/n-Si has a rectifying ratio of -35 within the applied voltages of -3.0 to ＋3.0 V, while the p-CuA1O2/p-Si shows Schottky diode-like characteristics, dominated in forward bias by the flow of space-charge-limited current.