Properties of n-type SnO_2 semiconductor prepared by spray ultrasonic technique for photovoltaic applications

作     者：H.Bendjedidi A.Attaf H.Saidi M.S.Aida S.Semmari A.Bouhdjar Y.Benkhetta 

作者机构：Laboratoire de Physique des Couches Minces et Applications Université de Biskra Laboratoire des Couches minces et Interfaces Université Mentouri 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2015年第36卷第12期

页      面：34-37页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0703[理学-化学] 0702[理学-物理学] 

主　　题：tin oxide thin films spray ultrasonic structural properties optical properties 

摘      要：Transparent conducting n-type SnO2 semiconductor films were fabricated by employing an inexpensive, simplified spray ultrasonic technique using an ultrasonic generator at deferent substrate temperatures （300, 350, 400, 450 and 500 ℃）. The structural studies reveal that the SnO2 films are polycrystalline at 350,400, 450, 500 ℃ with preferential orientation along the （200） and （101） planes, and amorphous at 300 ℃. The crystallite size of the films was found to be in the range of 20.9-72.2 nm. The optical transmittance in the visible range and the optical band gap are 80% and 3.9 eV respectively. The films thicknesses were varied between 466 and 1840 nm. The resistivity was found between 1.6 and 4 × 10^-2 Ω.cm. This simplified ultrasonic spray technique may be considered as a promising alternative to a conventional spray for the massive production of economic SnO2 films for solar cells, sensors and opto-electronic applications.