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Numerical simulation of the effect of the free carrier motilities on light-soaked a-Si:H p–i–n solar cell

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Journal of Semiconductors 2015年第7期36卷 59-68页

作者： L.Ayat A.F.bouhdjar AF.Meftah N.Sengouga Laboratory of Semiconductor Devices Physics Physics DepartmentUniversity of Béchar Faculté des Sciences de la matière Laboratoire des Matériaux Semi-conducteurs et MétalliquesUniversité Mohammed Khider

Using a previous model, which was developed to describe the light-induced creation ofthe defect density in the a-Si：H gap states, we present in this work a computer simulation of the a-Si：H p-i-n solar cell behavior under continuous illumination. We have considered the simple case of a monochromatic light beam nonuniformly absorbed. As a consequence of this light-absorption profile, the increase of the dangling bond density is assumed to be inhomogeneous over the intrinsic layer （i-layer）. We investigate the internal variable profiles during illumination to understand in more detail the changes resulting from the light-induced degradation effect. Changes in the cell external parameters including the open circuit voltage, Voc, the short circuit current density, Jsc, the fill factor, FF, and the maximum power density, Pmax, are also presented. This shows, in addition, the free carrier mobility influence. The obtained results show that Voc seems to be the less affected parameter by the light-induced increase of the dangling bond density. Moreover, its degradation is very weak-sensitive to the free carrier mobility. Finally, the free hole mobility effect is found to be more important than that of electrons in the improvement of the solar cell performance.

关键词： a-Si:H Staebler-Wronski effect defect pool model p-i-n

Computer modelling and analysis of the photodegradation effect in a-Si:H p–i–n solar cell

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Journal of Semiconductors 2015年第1期36卷 52-59页

作者： A.F bouhdjar L.Ayat AM.Meftah N.Sengouga AF.Meftah Faculté des Sciences Laboratoire des Matériaux Semi-conducteurs et Métalliques Université Mohammed Khider B.P. 145Biskra 07000 Algérie Laboratory of Semiconductor Devices Physics Physics Department University of Béchar P.O. Box 417 Béchar 08000Algeria

Using a previous model, which was developed to describe the light-induced creation of the defect density in the a-Si：H gap states, we present in this work a numerical modelling of the photodegradation effect in the a-Si：H p–i–n solar cell under continuous illumination. We first considered the simple case of a monochromatic light beam with a wavelength λ between 530–540 nm non uniformly absorbed, then the global standard solar spectrum（AM1.5） illumination is taken into account. The photodegradation is analysed on the basis of the resulting changes in the free carrier＇s densities, recombination rate, band structure, electrical potential and field, space charge, and current densities. Changes in the cell＇s external parameters： the open circuit voltage Voc, the short circuit current density Jsc, the fill factor FF and the maximum power density Pmaxare also presented.

关键词： a-Si:H Staebler–Wronski effect p–i–n

Structural and optical properties of a NaCl single crystal doped with CuO nanocrystals

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Chinese Physics B 2013年第9期22卷 605-609页

作者： S. Addala L. Bouhdjer A. Chala A. bouhdjar O. Halimi B. Boudine M. Sebais Laboratory of Crystallography Department of PhysicsMentouri University of Constantine Laboratory of Applied Chemistry Department of PhysicsMohamed Khaider University of Biskra

A cupric oxide （CuO） nanocrystal-doped NaC1 single crystal and a pure NaCl single crystal are grown by using the Czochralski （Cz） method. A number of techniques, including X-ray diffraction （XRD）, scanning electron microscopy （SEM）, energy dispersive X-ray （EDX） analysis, Fourier transform infrared （FT-IR） spectroscopy, Raman spectroscopy, optical absorption in the UV-visible range, and photoluminescence （PL） spectroscopy are used to characterize the obtained NaCl and NaCI：CuO crystals. It is observed that the average radius of CuO crystallites in NaCI：CuO crystal is about 29.87 nm, as derived from the XRD data analysis. Moreover, FT-IR and Raman spectroscopy results confirm the existence of the monoclinic CuO phase in NaC1 crystal. UV-visible absorption measurements indicate that the band gap of the NaCI：CuO crystal is 434 nm （2.85 eV）, and it shows a significant amount of blue-shift （AEg = 1 eV ） in the band gap energy of CuO, which is due to the quantum confinement effect exerted by the CuO nanocrystals. The PL spectrum of the NaCI：CuO shows a broad emission band centred at around 438 rim, which is consistent with the absorption measurement.

关键词： NaC1 single crystal CuO nanocrystals Raman spectroscopy photoluminescence