Point defects in active layers of TFEL devices based on ZnS

作     者：Zhidong Lou A. N. Georgobiani Zheng Xu Chunxiang Xu Feng Teng Lei Yu Xurong Xu 

作者机构：Tianjin Univ Dept Appl Phys Tianjin 300072 Peoples R China PN Lebedev Phys Inst Moscow 117924 Russia No Jiaotong Univ Dept Phys Beijing 100044 Peoples R China Tianjin Inst Technol Inst Mat Phys Tianjin 300191 Peoples R China Chinese Acad Sci Changchun Inst Phys Lab Excited State Proc Changchun 130021 Peoples R China 

出 版 物：《Chinese Science Bulletin》 (中国科学通报)

年 卷 期：1998年第43卷第6期

页      面：518-522页

核心收录：

学科分类：08[工学] 0803[工学-光学工程] 

基　　金：theNationalNaturalScienceFoundationofChina (GrantNo .19334 0 30 ) andisajointprojectintheframeworkofcooperationbetweenChineseFoundationofNaturalSciencesandRussianFoundationofbasicresearch 

主　　题：spectra of photoluminescence point defects thin film electroluminescence. 

摘      要：Point defects in the active layer of a layered optimization thin film electroluminescent device of ZnS: Er 3+ were studied. The results indicate that besides Er 3+ substituting for Zn 2+ as luminescent centers, the dominant point defects are sulfur vacancies, zinc vacancies, shallow donors and deep acceptors. Their influence on electroluminescence is