Near Infrared Photoluminescence from Yb,Al Co-implanted SiO2 Films on Silicon

作     者：张建国 王晓欣 成步文 余金中 王启明 

作者机构：State Key Laboratory on Integrated Optoelectronics Institute of Semiconductors Chinese Academy of Sciences 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2006年第23卷第8期

页      面：2183-2186页

核心收录：

学科分类：0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 070205[理学-凝聚态物理] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0702[理学-物理学] 

基　　金：国家自然科学基金 

主　　题：SI-NANOCRYSTALS MU-M ENERGY-TRANSFER RICH SIO2 LUMINESCENCE EXCITATION EMISSION IONS FLUORESCENCE WAVELENGTH 

摘      要：Intense room-temperature near infrared （NIR） photoluminescence （980 nm and 1032 nm） is observed from Yb,Al co-implanted SiO2 films on silicon. The optical transitions occur between the ^2F5/2 and ^2F7/2 levels of Yb^3＋ in SiO2. The additional Al-implantation into SiO2 films can effectively improve the concentration quenching effect of Yb^3＋ in SiO2. Photoluminescence excitation spectroscopy shows that the NIR photoluminescence is due to the non-radiative energy transfer from Al-implantation-induced non-bridging oxygen hole defects in SiO2 to Yb^3＋ in the Yb-related luminescent complexes. It is believed that the defect-mediated luminescence of rare-earth ions in SiO2 is very effective.