The property of Si/SiGe/Si heterostructure during thermal budget characterized by HRXRD

作     者：CHENChang-Chun LIUZhi-Hong HUANGWen-Tao DOUWei-Zhi ZHANGWei TSIENPei-Hsin ZHUDe-Zhang 

作者机构：InstituteofMicroelectronicsTsinghuaUniversityBeijing100084 ShanghaiInstituteofAppliedPhysicstheChineseAcademyofSciencesShanghai201800 

出 版 物：《Nuclear Science and Techniques》 (核技术（英文）)

年 卷 期：2003年第14卷第4期

页      面：238-241页

核心收录：

学科分类：08[工学] 082701[工学-核能科学与工程] 0827[工学-核科学与技术] 

基　　金：the National High Technology and Research Development Program(863 Program)of China(No.2002AA321230) partially supported by the National Natural Sciences Foundation of China(No.10075072) 

主　　题：Si/SiGe/Si异质结构 热平衡 HRXRD 超高真空化学气相沉积 UHVCVD X射线衍射 

摘      要：Si/SiGe/Si heterostructures grown by ultra-high-vacuum chemical vapor deposition (UHVCVD) werecharacterized by Rutherford backscattering/Channeling (RBS/C) together with high resolution X ray diffraction(HRXRD). High quality SiGe base layer was obtained. The Si/SiGe/Si heterostructures were subject to conventionalfurnace annealing and rapid thermal annealing with temperature between 750 ℃ and 910 ℃. Both strain and its re-laxation degree in SiGe layer are calculated by HRXRD combined with elastic theory, which are never reported inother literatures. The rapid thermal annealing at elevated temperature between 880 ℃ and 910 ℃ for very short timehad almost no influence on the strain in Si0.84Ge0. 16 epilayer. However, high temperature (900℃) furnace annealingfor 1h prompted the strain in Si0.84Ge0.16 layer to relax.