Impact of thickness of GaN buffer layer on properties of AlN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition

作     者：WU ChaoMin1, SHANG JingZhi1, ZHANG BaoPing1,2, ZHANG JiangYong1,3, YU JinZhong1,3 & WANG QiMing1,31 Department of Physics and Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, China 2 Pen-Tung Sah Micro/Nano Technology Research Center, Xiamen University, Xiamen 361005, China 3 State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China 

作者机构：Department of Physics and Semiconductor Photonics Research Center Xiamen University Xiamen China Pen-Tung Sah Micro/Nano Technology Research Center Xiamen University Xiamen China State Key Laboratory on Integrated Optoelectronics Institute of Semiconductors Chinese Academy of Sciences Beijing China 

出 版 物：《Science China(Technological Sciences)》 (中国科学（技术科学英文版）)

年 卷 期：2010年第53卷第2期

页      面：313-316页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：supported by the National Hi-Tech Research and Development Program of China ("863" Project) (Grant No. 2006AA03Z409) 

主　　题：MOCVD DBR high-reflectivity nitride 

摘      要：We studied the impact of the thickness of GaN buffer layer on the properties of distributed Bragg reflector (DBR) grown by metalorganic chemical vapor deposition (MOCVD). The samples were characterized by using metallographic microscope, transmission electron microscope (TEM), atomic force microscopy (AFM), X-ray diffractometer (XRD) and spectrophotometer. The results show that the thickness of the GaN buffer layer can significantly affect the properties of the DBR structure and there is an optimal thickness of the GaN buffer layer. This work would be helpful for the growth of high quality DBR structures.