Ka-band thin film lithium niobate photonic integrated optoelectronic oscillator

作     者：RUI MA ZIJUN HUANG SHENGQIAN GAO JINGYI WANG XICHEN WANG XIAN ZHANG PENG HAO X.STEVE YAO XINLUN CAI 

作者机构：State Key Laboratory of Optoelectronic Materials and TechnologiesSchool of Electronics and Information TechnologySun Yat-sen UniversityGuangzhou 510275China Photonics Information Innovation Center and Hebei Provincial Center for Optical SensingCollege of Physics Science and TechnologyHebei UniversityBaoding 071002China NuVison PhotonicsInc.Las VegasNevada 89109USA 

出 版 物：《Photonics Research》 (光子学研究（英文版）)

年 卷 期：2024年第12卷第6期

页      面：1283-1293页

核心收录：

学科分类：080904[工学-电磁场与微波技术] 080603[工学-有色金属冶金] 0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 08[工学] 0202[经济学-应用经济学] 1202[管理学-工商管理] 1201[管理学-管理科学与工程(可授管理学、工学学位)] 070207[理学-光学] 0817[工学-化学工程与技术] 0806[工学-冶金工程] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0803[工学-光学工程] 0702[理学-物理学] 

基　　金：National Key Research and Development Program of China(2019YFA0705000) National Natural Science Foundation of China(62293523) Advanced Talents Program of Hebei University(521000981006) Natural Science Foundation of Hebei Province(F2021201013) 

主　　题：optoelectronic modulator resonator 

摘      要：Photonics integration of an optoelectronic oscillator(OEO)on a chip is attractive for fabricating low cost,compact,low power consumption,and highly reliable microwave sources,which has been demonstrated recently in silicon on insulator(SOI)and indium phosphide(InP)platforms at X-band around 8 *** we demonstrate the first integration of OEOs on the thin film lithium niobate(TFLN)platform,which has the advantages of lower Vπ,no chirp,wider frequency range,and less sensitivity to *** have successfully realized two different OEOs operating at Ka-band,with phase noises even lower than those of the X-band OEOs on SOI and InP *** is a fixed frequency OEO at 30 GHz realized by integrating a Mach–Zehnder modulator(MZM)with an add-drop microring resonator(MRR),and the other is a tunable frequency OEO at 20–35 GHz realized by integrating a phase modulator(PM)with a notch *** work marks the first step of using TFLN to fabricate integrated OEOs with high frequency,small size,low cost,wide range tunability,and potentially low phase noise.