Influence of oxygen exposure on instabilities of perfluoropentacene transistor characteristics with different gate insulators

作     者：Hideharu UEKI Hiroaki YANO Hirokuni OHUCHI Yutaro TAKAYANAGI Yasushiro NISHIOKA 

作者机构：Department of Precision MachineryCollege of Science and TechnologyNihon UniversityChiba 274-8501Japan 

出 版 物：《Progress in Natural Science:Materials International》 (自然科学进展·国际材料(英文))

年 卷 期：2011年第21卷第1期

页      面：12-16页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

主　　题：oxygen exposure OTFT perfluoropentacene gate insulator polyimide SiO2 

摘      要：Pentacene for p-channel organic field effect transistors（OTFTs） and perfluoropentacene for n-channel OTFTs have attracted strong attentions to be used as CMOS type organic semiconductor materials for flexible organic displays.n-channel OTFTs with different gate insulators of polyimide（PI） and SiO2and perfluoropentacene as a semiconductor layer were fabricated,and their instability of the transistor characteristics measured in air,vacuum and oxygen was *** results show that both of the transistors exhibit a significant increase of mobility when measured in ***,the mobility of the transistors is significantly reduced when measured in pure oxygen,and the threshold voltages continuously *** phenomena may be related to water diffusion into the perfluoropentacene/gate insulator interface in air and oxidation of perfluoropentacene in oxygen.