Ultrahigh thermoelectric properties of p-type BixSb2-xTe3 thin films with exceptional flexibility for wearable energy harvesting
作者机构：Shenzhen Univ Coll Phys & Optoelect Engn Shenzhen Key Lab Adv Thin Films & Applicat Key Lab Optoelect Devices & Syst Minist Educ & Gua Shenzhen Peoples R China Shenzhen Univ Coll Phys & Optoelect Engn Shenzhen Key Lab Adv Thin Films & Applicat Key Lab Optoelect Devices & Syst Minist Educ & Gua Shenzhen 518060 Peoples R China Chinese Univ Hong Kong Dept Mech & Automat Engn Sha Tin Hong Kong Peoples R China
出 版 物：《CARBON ENERGY》 (碳能源（英文）)
年 卷 期：2024年第6卷第8期
页 面：273-284页
核心收录：
学科分类：0820[工学-石油与天然气工程] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0703[理学-化学]
基 金：National Natural Science Foundation of China Guangdong Basic and Applied Basic Research Foundation [2022A1515010929] Science and Technology Plan Project of Shenzhen [JCYJ20220531103601003, 20220810154601001] Electron Microscope Center of Shenzhen University 62274112
主 题：BixSb2-xTe3 electrical transport properties flexibility thermoelectric THERMAL-CONDUCTIVITY BI2TE3 FILMS PERFORMANCE SB2TE3 FIGURE MERIT ENHANCEMENT FABRICATION TRANSITION COMPOSITE
摘 要：Use of a flexible thermoelectric source is a feasible approach to realizing self-powered wearable electronics and the Internet of Things. Inorganic thin films are promising candidates for fabricating flexible power supply, but obtaining high-thermoelectric-performance thin films remains a big challenge. In the present work, a p-type BixSb2-xTe3 thin film is designed with a high figure of merit of 1.11 at 393 K and exceptional flexibility (less than 5% increase in resistance after 1000 cycles of bending at a radius of similar to 5 mm). The favorable comprehensive performance of the BixSb2-xTe3 flexible thin film is due to its excellent crystallinity, optimized carrier concentration, and low elastic modulus, which have been verified by experiments and theoretical calculations. Further, a flexible device is fabricated using the prepared p-type BixSb2-xTe3 and n-type Ag2Se thin films. Consequently, an outstanding power density of similar to 1028 mu W cm(-2) is achieved at a temperature difference of 25 K. This work extends a novel concept to the fabrication of high-performance flexible thin films and devices for wearable energy harvesting.
维普期刊数据库