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Ultrahigh thermoelectric properties of p-type BixSb2-xTe3 thin films with exceptional flexibility for wearable energy harvesting

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CARBON ENERGY 2024年第8期6卷 273-284页

作者： Zheng, Zhuang-Hao Zhong, Yi-Ming Li, Yi-Liu Nisar, Mohammad Mansoor, Adil Li, Fu Chen, Shuo Liang, Guang-Xing Fan, Ping Xu, Dongyan Wei, Meng Chen, Yue-Xing Shenzhen Univ Coll Phys & Optoelect Engn Shenzhen Key Lab Adv Thin Films & Applicat Key Lab Optoelect Devices & Syst Minist Educ & Gua Shenzhen Peoples R China Shenzhen Univ Coll Phys & Optoelect Engn Shenzhen Key Lab Adv Thin Films & Applicat Key Lab Optoelect Devices & Syst Minist Educ & Gua Shenzhen 518060 Peoples R China Chinese Univ Hong Kong Dept Mech & Automat Engn Sha Tin Hong Kong Peoples R China

Use of a flexible thermoelectric source is a feasible approach to realizing self-powered wearable electronics and the Internet of Things. Inorganic thin films are promising candidates for fabricating flexible power supply, but obtaining high-thermoelectric-performance thin films remains a big challenge. In the present work, a p-type BixSb2-xTe3 thin film is designed with a high figure of merit of 1.11 at 393 K and exceptional flexibility (less than 5% increase in resistance after 1000 cycles of bending at a radius of similar to 5 mm). The favorable comprehensive performance of the BixSb2-xTe3 flexible thin film is due to its excellent crystallinity, optimized carrier concentration, and low elastic modulus, which have been verified by experiments and theoretical calculations. Further, a flexible device is fabricated using the prepared p-type BixSb2-xTe3 and n-type Ag2Se thin films. Consequently, an outstanding power density of similar to 1028 mu W cm(-2) is achieved at a temperature difference of 25 K. This work extends a novel concept to the fabrication of high-performance flexible thin films and devices for wearable energy harvesting.

关键词： BixSb2-xTe3 electrical transport properties flexibility thermoelectric THERMAL-CONDUCTIVITY BI2TE3 FILMS PERFORMANCE SB2TE3 FIGURE MERIT ENHANCEMENT FABRICATION TRANSITION COMPOSITE

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Realizing high thermoelectric performance in n-type Bi_(2)Te_(3)based thin films via post-selenization diffusion

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Journal of Materiomics 2023年第4期9卷 618-625页

作者： Yue-Xing Chen Jun-Ze Zhang Mohammad Nisar Adeel Abbas Fu Li Guang-Xing Liang Ping Fan Zhuang-Hao Zheng Shenzhen Key Laboratory of Advanced Thin Films and Applications Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060China

Thermoelectric thin film has attracted a lot of attention due to its potential in fabricating micropower generator in chip sensors for internet of things(IoT).However,the undeveloped performance of n-type thermoelectric thin film limits its widely *** this work,a facile post-selenization diffusion reaction method is employed to introduce Se into Bi_(2)Te_(3)thin films,in order to optimize the carrier transport *** and theoretical calculation results indicate that the carrier concentration decreases and density of states increases after Se doping,leading to the enhancement of Seebeck ***,adjusting the diffusion reaction temperature can maintain the carrier concentration while increasing the mobility simultaneously,resulting in a high power factor of 1.5 mW/(m·K^(2)),which is eight times higher than that of the pristine Bi_(2)Te_(3)thin ***,a thin film device fabricated by the present Se-doped Bi_(2)Te_(3)thin films shows the highest output power of 60.20 nW under the temperature difference of 37 K,indicating its potential for practical use.

关键词： Thermoelectric Thin film Magnetron sputtering Bie-Tee-Se

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Enhanced thermoelectric properties of n-type Bi_(2)O_(2)Se by KCl doping

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Journal of Advanced Ceramics 2023年第9期12卷 1767-1776页

作者： Zi-long Zhang Tao Wang Mohammad Nisar Yue-xing Chen Fu Li Shuo Chen Guang-xing Liang Ping Fan Zhuang-hao Zheng Shenzhen Key Laboratory of Advanced Thin Films and Applications Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen 518060China

Bi_(2)O_(2)Se is considered one of the most promising thermoelectric(TE)materials for combining with p-type BiCuSeO in a TE module given its unique chemical and thermal ***,the enhancement of its dimensionless figure of merit,zT value,remains a challenge because of its low electrical ***,we introduce KCl into Bi_(2)O_(2)Se,synthesized by solid-state reaction and spark plasma sintering method,to improve its TE *** synthesized samples show an outstanding enhancement in electrical conductivity,carrier concentration,and power factor after KCl *** Bi_(2)O_(2)Se-based sample with a 0.05%KCl doping content possesses a high zT value of~0.58 at 773 K,which is over 50%enhancement compared with the pristine Bi_(2)O_(2)Se *** also prove that the K element substitutes the Bi site,and Cl replaces the Se site by X-ray diffraction results and density functional theory calculation,supporting that K can improve the electrical conductivity by the position of Fermi level which is above the conduction band *** and theoretical results indicate the success of co-doping with a small amount of KCl and show a huge potential of this novel method for Bi_(2)O_(2)Se TE performance improvement.

关键词： thermoelectric(TE)materials Bi_(2)O_(2)Se KCl co-doping figure of merit(zT)

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