空间选择性缺陷管理制备高性能碳基CsPbI_(3)钙钛矿太阳能电池
Spatially selective defect management of CsPbI_(3)films for high-performance carbon-based inorganic perovskite solar cells作者机构:School of Materials Science and EngineeringBeihang UniversityBeijing 100191China Guangdong Provincial Key Lab of Nano-Micro Materials ResearchSchool of Advanced MaterialsShenzhen Graduate SchoolPeking UniversityShenzhen 518055China Institute of Biomedical EngineeringShenzhen Bay LaboratoryShenzhen 518107China School of ChemistryBeihang UniversityBeijing 100191China Beijing Key Laboratory of Construction Tailorable Advanced Functional Materials and Green ApplicationsMIIT Key Laboratory for Low-Dimensional Quantum Structure and DevicesExperimental Center of Advanced MaterialsSchool of Materials Science&EngineeringBeijing Institute of TechnologyBeijing 100081China School of Internet of Things EngineeringJiangnan UniversityWuxi 214122China School of Physical Science and TechnologyGuangxi UniversityNanning 530004China Experimental Center of Advanced MaterialsSchool of Materials Science&EngineeringBeijing Institute of TechnologyBeijing 100081China
出 版 物:《Science Bulletin》 (科学通报(英文版))
年 卷 期:2024年第69卷第8期
页 面:1050-1060页
核心收录:
学科分类:08[工学] 080501[工学-材料物理与化学] 080502[工学-材料学] 0805[工学-材料科学与工程(可授工学、理学学位)]
基 金:supported by the National Natural Science Foundation of China(21875013,U2001217) the Beijing Natural Science Foundation(2182031) Shenzhen Basic Research(JCYJ20220818101018038)
主 题:CsPbI_(3) Defects Spatially selective defect management Carbon electrode
摘 要:Defects formed at the surface,buried interface and grain boundaries(GB)of CsPbI_(3)perovskite films considerably limit photovoltaic *** defects could be passivated effectively by the most prevalent post modification strategy without compromising the photoelectric properties of perovskite films,but it is still a great challenge to make this strategy comprehensive to different defects spatially distributed throughout the ***,a spatially selective defect management(SSDM)strategy is developed to roundly passivate various defects at different locations within the perovskite film by a facile one-step treatment procedure using a piperazine-1,4-diium tetrafluoroborate(PZD(BF_(4))_(2))*** small-size PZD^(2+)cations could penetrate into the film interior and even make it all the way to the buried interface of CsPbI_(3)perovskite films,while the BF_(4)^(-)anions,with largely different properties from I^(-)anions,mainly anchor on the film ***,virtually all the defects at the surface,buried interface and grain boundaries of CsPbI_(3)perovskite films are effectively healed,leading to significantly improved film quality,enhanced phase stability,optimized energy level alignment and promoted carrier *** these films,the fabricated CsPbI_(3)PSCs based on carbon electrode(C-PSCs)achieve an efficiency of18.27%,which is among the highest-reported values for inorganic C-PSCs,and stability of 500 h at 85℃with 65%efficiency maintenance.