Proposal for valleytronic materials:Ferrovalley metal and valley gapless semiconductor
作者机构：School of Electronic EngineeringXi’an University of Posts and TelecommunicationsXi’an 710121China Key Laboratory of Extraordinary Bond Engineering and Advanced Materials Technology of ChongqingSchool of Electronic Information EngineeringYangtze Normal UniversityChongqing 408100China College of Electronic and Information EngineeringAnshun UniversityAnshun 561000China ScienceMathematics and Technology(SMT)Singapore University of Technology and Design(SUTD)8 Somapah RoadSingapore 487372Singapore
出 版 物：《Frontiers of physics》 (物理学前沿（英文版）)
年 卷 期：2024年第19卷第2期
页 面：131-139页
核心收录：
学科分类：07[理学] 0809[工学-电子科学与技术（可授工学、理学学位）] 070205[理学-凝聚态物理] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0702[理学-物理学]
基 金：supported by Natural Science Basis Research Plan in Shaanxi Province of China(No.2020JQ-845) Y.S.A.is supported by the Singapore Ministry of Education Academic Research Fund Tier 2(Award No.MOE-T2EP50221-0019)
主 题：valleytronics electric field bilayer
摘 要：Valleytronic materials can provide new degrees of freedom to future electronic *** this work,the concepts of the ferrovalley metal(FVM)and valley gapless semiconductor(VGS)are proposed,which can be achieved in valleytronic bilayer systems by electric field *** valleytronic bilayer systems,the interaction between out-of-plane ferroelectricity and A-type antiferromagnetism can induce layer-polarized anomalous valley Hall(LP-AVH)*** K and−K valleys of FVM are both metallic,and electron and hole carriers simultaneously *** the extreme case,the FVM can become VGS by analogizing spin gapless semiconductor(SGS).Moreover,it is proposed that the valley splitting enhancement and valley polarization reversal can be achieved by electric field engineering in valleytronic bilayer *** the bilayer RuBr_(2)as an example,our proposal is confirmed by the first-principle *** FVM and VGS can be achieved in bilayer RuBr_(2)by applying electric *** appropriate electric field range,increasing electric field can enhance valley splitting,and the valley polarization can be reversed by flipping electric field *** effectively tune valley properties by electric field in bilayer systems,the parent monolayer should possess out-of-plane magnetization,and have large valley *** results shed light on the possible role of electric field in tuning valleytronic bilayer systems,and provide a way to design the ferrovalley-related material by electric field.
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