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Layer-controlled nonlinear terahertz valleytronics in two-dimensional semimetal and semiconductor PtSe_(2)

InfoMat 2023年第11期5卷 49-63页

作者： Minoosh Hemmat Sabrine Ayari Martin Micica Hadrien Vergnet Shasha Guo Mehdi Arfaoui Xuechao Yu Daniel Vala Adrien Wright Kamil Postava Juliette Mangeney Francesca Carosella Sihem Jaziri Qi Jie Wang Zheng Liu Jérôme Tignon Robson Ferreira Emmanuel Baudin Sukhdeep Dhillon Laboratoire de Physique de l'Ecole normale supérieure ENSUniversitéPSLCNRSSorbonne UniversitéUniversitéde Paris-CitéParisFrance School of Materials Science and Engineering Nanyang Technological UniversitySingaporeSingapore Laboratoire de Physique de la Matière Condensée Département de PhysiqueFacultédes Sciences de TunisUniversitéTunis El ManarCampus UniversitaireTunisTunisia Key Laboratory of Multifunctional Nanomaterials and Smart Systems Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesSuzhouJiangsuthe People's Republic of China IT4Innovations National Supercomputing CenterVSB—Technical University of OstravaOstrava-PorubaCzech Republic Faculty of Materials Science and Technology VSB—Technical University of OstravaOstrava-PorubaCzech Republic School of Electrical and Electronic Engineering&School of Physical and Mathematical Sciences The Photonics InstituteNanyang Technological UniversitySingaporeSingapore

Platinum diselenide(PtSe_(2))is a promising two-dimensional(2D)material for the terahertz(THz)range as,unlike other transition metal dichalcogenides(TMDs),its bandgap can be uniquely tuned from a semiconductor in the nearinfrared to a semimetal with the number of atomic *** gives the material unique THz photonic properties that can be ***,we demonstrate that a controlled THz nonlinearity—tuned from monolayer to bulk PtSe_(2)—can be realized in wafer size polycrystalline PtSe_(2)through the generation of ultrafast photocurrents and the engineering of the bandstructure *** is combined with the PtSe_(2)layer interaction with the substrate for a broken material centrosymmetry,permitting a second order ***,we show layer dependent circular dichroism,where the sign of the ultrafast currents and hence the phase of the emitted THz pulse can be controlled through the excitation of different bandstructure *** particular,we show that a semimetal has a strong dichroism that is absent in the monolayer and few layer semiconducting *** microscopic origins of this TMD bandstructure engineering are highlighted through detailed DFT simulations,and shows the circular dichroism can be controlled when PtSe_(2)becomes a semimetal and when the K-valleys can be *** well as showing that PtSe_(2)is a promising material for THz generation through layer controlled optical nonlinearities,this work opens up a new class of circular dichroism materials beyond the monolayer limit that has been the case of traditional TMDs,and impacting a range of domains from THz valleytronics,THz spintronics to harmonic generation.

关键词： 2D transition metal dichalcogenides Dirac semimetal optical nonlinearities terahertz valleytronics

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valleytronics in transition metal dichalcogenides materials

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Nano Research 2019年第11期12卷 2695-2711页

作者： Yanping Liu Yuanji Gao Siyu Zhang Jun He Juan Yu Zongwen Liu School of Plhysics and Elecrorics Hunan Key Laboratory for Super microstr ucture and Utrafast ProcessCentral South University932 South Lushan RoadChangsha 410083China State Key Laboralory of High Performance Complex Manufacturing Central South University932 South Lushan RoadChangsha 410083China School of Electronics and Information Hangzhou Dianzi Unriversity1158 Second StreetXiasha College ParkHangzhou 310018China School of Chemical and Biomolecular Engineering The University of SydneyNSW 2006Australia

Valley degree of freedom in the first Brillouin zone of Bloch electrons offers an innovative approach to information storage and quantum *** inversion symmetry together with the presence of time-reversal symmetry endows Bloch electrons non-zero Berry curvature and orbital magnetic moment,which contribute to the valley Hall effect and optical selection rules in ***,the emerging transition metal dichalcogenides(TMDs)materials naturally become the ideal candidates for valleytronics research attributable to their novel structural,photonic and electronic properties,especially the direct bandgap and broken inversion symmetry in the ***,the mechanism of inter-valley relaxation remains ambiguous and the complicated manipulation of valley predominantly incumbers the realization of valleytronic *** this review,we systematically demonstrate the fundamental properties and tuning strategies(optical,electrical,magnetic and mechanical tuning)of valley degree of freedom,summarize the recent progress of TMD-based valleytronic *** also highlight the conclusion of present challenges as well as the perspective on the further investigations in valleytronics.

关键词： valleytronics valley excitons transition metal dichalogenides(TMDs) valley Hall effect quantum devices

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Band engineering of valleytronics WSe_(2)–MoS_(2)heterostructures via stacking form,magnetic moment and thickness

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Chinese Physics B 2023年第10期32卷 45-49页

作者：吴彦玮张宗源马亮刘涛郝宁吕文刚龙明生单磊 Information Materials and Intelligent Sensing Laboratory of Anhui Province Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of EducationInstitutes of Physical Science and Information TechnologyAnhui UniversityHefei 230601China State Key Laboratory of Metastable Materials Science&Technology and Key Laboratory for Microstructural Material Physics of Hebei Province School of ScienceYanshan UniversityQinhuangdao 066004China Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions High Magnetic Field LaboratoryChinese Academy of SciencesHefei 230031China Beijing National center for Condensed Matter Physics Beijing Key Laboratory for Nanomaterials and NanodevicesInstitute of PhysicsChinese Academy of SciencesBeijing 100190China

Spin-valley polarization and bandgap regulation are critical in the developing of quantum ***,by employing the density functional theory,we investigate the effects of stacking form,thickness and magnetic moment in the electronic structures of WSe_(2)–MoS_(2)*** show that spin-valley polarization maintains in all *** thickness of 2H-MoS_(2)not only tunes the bandgap but also changes the degeneracy of the conduction band minimums(CBM)at K/K_(1) *** increase of micro magnetic moment tunes the bandgap and raises the valence band maximums(VBM)atΓ*** addition,the regulation of band gap by the thickness of 2H-MoS_(2)and introduced magnetic moment depends on the stacking *** suggest that WSe_(2)–MoS_(2)heterostructure supports an ideal platform for valleytronics *** methods also give new ways of optical absorption regulation in spin-valley devices.

关键词： valleytronics thickness stacking magnetic moment

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Anomalous valley Hall effect in two-dimensional valleytronic materials

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Chinese Physics B 2024年第4期33卷 2-14页

作者：陈洪欣原晓波任俊峰 School of Physics and Electronics Shandong Normal UniversityJinan 250358China Shandong Provincial Engineering and Technical Center of Light Manipulations&Institute of Materials and Clean Energy Shandong Normal UniversityJinan 250358China

The anomalous valley Hall effect(AVHE)can be used to explore and utilize valley degrees of freedom in materials,which has potential applications in fields such as information storage,quantum computing and *** exists in two-dimensional(2D)materials possessing valley polarization(VP),and such 2D materials usually belong to the hexagonal honeycomb ***,it is necessary to achieve valleytronic materials with VP that are more readily to be synthesized and applicated *** this topical review,we introduce recent developments on realizing VP as well as AVHE through different methods,i.e.,doping transition metal atoms,building ferrovalley heterostructures and searching for ferrovalley ***,2D ferrovalley systems under external modulation are also discussed.2D valleytronic materials with AVHE demonstrate excellent performance and potential applications,which offer the possibility of realizing novel low-energy-consuming devices,facilitating further development of device technology,realizing miniaturization and enhancing functionality of them.

关键词： anomalous valley Hall effect valley polarization valleytronics two-dimensional materials

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Ultrafast investigation of room temperature valley polarization in“optical bilayer”WS_(2)

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Science China(Technological Sciences) 2024年第1期67卷 91-97页

作者： ZHAO LeYi WANG Hai LIU TianYu LI FangFei ZHOU Qiang WANG HaiYu Synergetic Extreme Condition High-Pressure Science Center State Key Laboratory of Superhard MaterialsCollege of PhysicsJilin UniversityChangchun 130012China State Key Laboratory of Integrated Optoelectronics College of Electronic Science and EngineeringJilin UniversityChangchun 130012China

Monolayer transition metal dichalcogenides(TMDCs)have become a promising platform in valleytronics due to possessing the regulatable valley degrees of ***,as a result of the rapid intervalley scattering,it is difficult to measure the PL valley polarization of monolayer TMDCs at room temperature,which limits their application in valleytronics ***,we report a room temperature photoluminescence(PL)valley polarization up to 3.73%in an“optical bilayer”WS_(2)formed by transferring monolayer WS_(2)onto flat Ag ***,in the transient absorption(TA)measurements,a remarkably long valley depolarization lifetime is ***,we demonstrate the valley properties of such“optical bilayer”WS_(2)resemble actual bilayer WS_(2),in which the robust valley polarization can be attributed to the phonons depletion effect and the blocked interlayer hopping *** peculiar valley features in“optical bilayer”WS_(2)provide a particularly simple method to enhance valley control at room temperature.

关键词： valleytronics optical bilayer transient absorption tungsten disulfide

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Proposal for valleytronic materials:Ferrovalley metal and valley gapless semiconductor

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Frontiers of physics 2024年第2期19卷 131-139页

作者： San-Dong Guo Yu-Ling Tao Guangzhao Wang Shaobo Chen Dong Huang Yee Sin Ang School of Electronic Engineering Xi’an University of Posts and TelecommunicationsXi’an 710121China Key Laboratory of Extraordinary Bond Engineering and Advanced Materials Technology of Chongqing School of Electronic Information EngineeringYangtze Normal UniversityChongqing 408100China College of Electronic and Information Engineering Anshun UniversityAnshun 561000China Science Mathematics and Technology(SMT)Singapore University of Technology and Design(SUTD)8 Somapah RoadSingapore 487372Singapore

Valleytronic materials can provide new degrees of freedom to future electronic *** this work,the concepts of the ferrovalley metal(FVM)and valley gapless semiconductor(VGS)are proposed,which can be achieved in valleytronic bilayer systems by electric field *** valleytronic bilayer systems,the interaction between out-of-plane ferroelectricity and A-type antiferromagnetism can induce layer-polarized anomalous valley Hall(LP-AVH)*** K and−K valleys of FVM are both metallic,and electron and hole carriers simultaneously *** the extreme case,the FVM can become VGS by analogizing spin gapless semiconductor(SGS).Moreover,it is proposed that the valley splitting enhancement and valley polarization reversal can be achieved by electric field engineering in valleytronic bilayer *** the bilayer RuBr_(2)as an example,our proposal is confirmed by the first-principle *** FVM and VGS can be achieved in bilayer RuBr_(2)by applying electric *** appropriate electric field range,increasing electric field can enhance valley splitting,and the valley polarization can be reversed by flipping electric field *** effectively tune valley properties by electric field in bilayer systems,the parent monolayer should possess out-of-plane magnetization,and have large valley *** results shed light on the possible role of electric field in tuning valleytronic bilayer systems,and provide a way to design the ferrovalley-related material by electric field.

关键词： valleytronics electric field bilayer

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Valley filtering and valley-polarized collective modes in bulk graphene monolayers

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Chinese Physics B 2024年第1期33卷 1-15页

作者：郑建龙翟峰 Department of Physics Zhejiang Normal UniversityJinhua 321004China Zhejiang Institute of Photoelectronics Zhejiang Normal UniversityJinhua 321004China

The presence of two sublattices in hexagonal graphene brings two energetically degenerate extremes in the conduction and valence bands, which are identified by the valley quantum number. Recently, this valley degree of freedom has been suggested to encode and process information, which develops a new carbon-based electronics named graphene valleytronics. In this topical review, we present and discuss valley-related transport properties in bulk graphene monolayers,which are due to strain-induced pseudomagnetic fields and associated vector potential, sublattice-stagger potential, and the valley-Zeeman effect. These valley-related interactions can be utilized to obtain valley filtering, valley spatial separation, valley-resolved guiding modes, and valley-polarized collective modes such as edge or surface plasmons. The present challenges and the perspectives on graphene valleytronics are also provided in this review.

关键词： valleytronics graphene strain valley-Zeeman effect plasmons

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Enhanced valley polarization in WSe_(2)/YIG heterostructures via interfacial magnetic exchange effect

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Nano Research 2023年第7期16卷 10580-10586页

作者： Haihong Zheng Biao Wu Chang-Tian Wang Shaofei Li Jun He Zongwen Liu Jian-Tao Wang Guoqiang Yu Ji-An Duan Yanping Liu School of Physics and Electronics Hunan Key Laboratory for Super-microstructure and Ultrafast ProcessCentral South UniversityChangsha 410083China State Key Laboratory of Precision Manufacturing for Extreme Service Performance Central South UniversityChangsha 410083China Beijing National Laboratory for Condensed Matter Physics Institute of PhysicsChinese Academy of SciencesBeijing 100190China School of Physical Sciences University of Chinese Academy of SciencesBeijing 100049China School of Chemical and Biomolecular Engineering The University of SydneyNSW 2006Australia The University of Sydney Nano Institute The University of SydneyNSW 2006Australia Songshan Lake Materials Laboratory Dongguan 523808China Shenzhen Research Institute of Central South University Shenzhen 518057China

Exploiting the valley degrees of freedom as information carriers provides new opportunities for the development of *** transition metal dichalcogenides(TMDs)with broken space-inversion symmetry exhibit emerging valley pseudospins,making them ideal platforms for studying valley ***,intervalley scattering of different energy valleys limits the achievable degree of valley ***,we constructed WSe_(2)/yttrium iron garnet(YIG)heterostructures and demonstrated that the interfacial magnetic exchange effect on the YIG magnetic substrate can enhance valley polarization by up to 63%,significantly higher than that of a monolayer WSe_(2)on SiO_(2)/Si(11%).Additionally,multiple sharp exciton peaks appear in the WSe_(2)/YIG heterostructures due to the strong magnetic proximity effect at the magnetic-substrate interface that enhances exciton emission ***,under the effect of external magnetic field,the magnetic direction of the magnetic substrate enhances valley polarization,further demonstrating that the magnetic proximity effect regulates valley *** results provide a new way to regulate valley polarization and demonstrate the promising application of magnetic heterojunctions in magneto-optoelectronics.

关键词： magnetic exchange effect valley polarization two-dimensional valleytronics magnetic substrate

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Switching of K-Q intervalley trions fine structure and their dynamics in n-doped monolayer WS_(2)

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Opto-Electronic Advances 2023年第4期6卷 28-37页

作者： Jiajie Pei Xue Liu Andrés Granados delÁguila Di Bao Sheng Liu Mohamed-Raouf Amara Weijie Zhao Feng Zhang Congya You Yongzhe Zhang Kenji Watanabe Takashi Taniguchi Han Zhang Qihua Xiong Collaborative Innovation Center for Optoelectronic Science and Technology International Collaborative Laboratory of 2D Materials for Optoelectronic Science and Technology of Ministry of Education and Guangdong ProvinceCollege of Optoelectronic EngineeringShenzhen UniversityShenzhen 518060China College of Materials Science and Engineering Fuzhou UniversityFuzhou 350108China Division of Physics and Applied Physics School of Physical and Mathematical SciencesNanyang Technological UniversitySingapore 637371Singapore College of Materials Science and Engineering Beijing University of TechnologyBeijing 100124China Research Center for Functional Materials International Center for Materials NanoarchitectonicsNational Institute for Materials ScienceTsukubaIbaraki 305-0044Japan State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics Tsinghua UniversityBeijing 100084China.

Monolayer group VI transition metal dichalcogenides(TMDs)have recently emerged as promising candidates for photonic and opto-valleytronic *** optoelectronic properties of these atomically-thin semiconducting crystals are strongly governed by the tightly bound electron-hole pairs such as excitons and trions(charged excitons).The anomalous spin and valley configurations at the conduction band edges in monolayer WS_(2)give rise to even more fascinating valley many-body *** we find that the indirect Q valley in the first Brillouin zone of monolayer WS_(2)plays a critical role in the formation of a new excitonic state,which has not been well *** employing a high-quality h-BN encapsulated WS_(2)field-effect transistor,we are able to switch the electron concentration within K-Q valleys at conduction band ***,a distinct emission feature could be excited at the high electron doping *** feature has a competing population with the K valley trion,and experiences nonlinear power-law response and lifetime dynamics under *** findings open up a new avenue for the study of valley many-body physics and quantum optics in semiconducting 2D materials,as well as provide a promising way of valley manipulation for next-generation entangled photonic devices.

关键词： 2D materials WS_(2) charged excitons trions indirect Q-valley valleytronics

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MoiréDirac fermions in transition metal dichalcogenides heterobilayers

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Chinese Physics B 2023年第10期32卷 31-37页

作者：车成龙吕亚威童庆军 School of Physics and Electronics Hunan UniversityChangsha 410082China

Monolayer group-VIB transition metal dichalcogenides(TMDs)feature low-energy massive Dirac fermions,which have valley contrasting Berry *** nontrivial local band topology gives rise to valley Hall transport and optical selection rules for interband transitions that open up new possibilities for ***,the large bandgap in TMDs results in relatively small Berry curvature,leading to weak valley contrasting physics in practical ***,we show that Dirac fermions with tunable large Berry curvature can be engineered in moirésuperlattice of TMD *** moiréDirac fermions are created in a magnified honeycomb lattice with its sublattice degree of freedom formed by two local moirépotential *** show that applying an on-site potential can tune the moiréflat bands into helical *** short-period moirésuperlattice,we find that the two moirévalleys become asymmetric,which results in a net spin Hall *** interestingly,a circularly polarized light drives these moiréDirac fermions into quantum anomalous Hall phase with chiral edge *** results open a new possibility to design the moiré-scale spin and valley physics using TMD moiréstructures.

关键词： moirésuperlattice valleytronics transition metal dichalcogenide quantum anomalous Hall state

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