Distribution of Ge Self-Assembled Quantum Dots on Six Ge1 - x Buffer Layers

作     者：Joonyeon Chang Hyungjun Kim 

作者机构：Nano Device Research CenterKorea Institute of Science and TechnologySeoul 136-791Korea Department of Electrical EngireeringUniversity of California LosAngelesCA 90095-1595USA 

出 版 物：《Journal of Rare Earths》 (稀土学报（英文版）)

年 卷 期：2004年第22卷第Z2期

页      面：133-135页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

主　　题：misfit dislocation Ge self assembled quantum dots molecular beam epitaxy transmission electron microscopy 

摘      要：The effect of buried misfit dislocation on the distribution of Ge self-assembled quantum dots (SAQDs) grown on a relaxed SiGe buffer layer was investigated. The strain field of arrays of buried dislocations in a relaxed SiGe buffer layer provided preferential nucleation sites for quantum dots. Burgers vector analysis using plan-view transmission electron microscopy (TEM) verified that the preferential nucleation sites of Ge SAQDs depended on the Burgers vector direction of corresponding dislocations. The measurement of the lateral distance between SAQDs and dislocations together with crosssection TEM observation clarified that the location of SAQDs was at the intersection of the dislocation slip plane and the top surface. The misfit strain should be an additional factor governing the uniformity in size, shape and distribution of Ge SAQDs.