The near-room-temperature upsurge of electrical resistivity in Lu-H-N is not superconductivity,but a metal-to-poor-conductor transition
作者机构:Center for High Pressure Science and Technology Advanced ResearchShanghai 201203China Key Laboratory of Materials PhysicsInstitute of Solid State PhysicsHFIPSChinese Academy of SciencesHefei 230031China University of Science and Technology of ChinaHefei 230026China Shanghai Key Laboratory of Material Frontiers Research in Extreme Environments(MFree)Shanghai Advanced Research in Physical Sciences(SHARPS)Shanghai 201203China State Key Laboratory of Superhard MaterialsInstitute of PhysicsJilin UniversityChangchun 130012China
出 版 物:《Matter and Radiation at Extremes》 (极端条件下的物质与辐射(英文))
年 卷 期:2023年第8卷第5期
页 面:96-98页
核心收录:
学科分类:08[工学] 0805[工学-材料科学与工程(可授工学、理学学位)] 080502[工学-材料学]
基 金:financial support from the Shanghai Science and Technology Committee,China the Shanghai Key Laboratory of Material Frontiers Research in Extreme Environments,China
主 题:resistance superconductivity transition
摘 要:The recent report of superconductivity in nitrogen-doped lutetium hydride(Lu-H-N)at 294 K and 1 GPa brought hope for long-sought-after ambient-condition ***,the failure of scientists worldwide to independently reproduce these results has cast intense skepticism on this exciting *** this work,using a reliable experimental protocol,we synthesized Lu-H-N while minimizing extrinsic influences and reproduced the sudden change in resistance near room *** quantitative comparison of the temperaturedependent resistance between Lu-H-N and the pure lutetium before reaction,we were able to clarify that the drastic resistance change is most likely caused by a metal-to-poor-conductor transition rather than by ***,we also briefly discuss other issues recently raised in relation to the Lu-H-N system.