Atmospheric Degradation and Performance Recovery of Two-Dimensional MoS2 Field Effect Transistor
作者机构:Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of EducationDepartment of ChemistryTsinghua UniversityBeijing100084 China Beijing Key Laboratory of Optoelectronic Functional Materials&Micro-nano DevicesDepartment of PhysicsRenmin University of ChinaBeijing100872 China Advanced Materials InstituteQilu University of Technology(Shandong Academy of Sciences)JinanShandong250000 China
出 版 物:《Chinese Journal of Chemistry》 (中国化学(英文版))
年 卷 期:2023年第41卷第21期
页 面:2832-2836页
核心收录:
学科分类:080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术(可授工学、理学学位)] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程(可授工学、理学学位)] 080502[工学-材料学]
基 金:L.J.acknowledges the National Natural Science Foundation of China(No.21925504) Tsinghua Toyota Joint Research Fund.Z.H.C.acknowledges the National Natural Science Foundation of China(Nos.61674045,61911540074) Fundamental Research Funds for the Central Universities and the Research Funds of Renmin University of China(Nos.21XNLG27,22XNH097)
主 题:MoS_(2) Field effect transistor Atmospheric degradation Performance recovery Semiconductors Doping Oxidation
摘 要:Two-dimensional(2D)transition metal dichalcogenides(TMDCs)showed great potentials in 2D nanoelectronic devices due to their abundant and unique *** performance stability of the 2D TMDCs devices turns into one of the keys for their practical applications but has been rarely ***,we investigated stability of MoS_(2)devices in ambient condition and contributed the device performance degradation to the surface oxidation of the contact metals with low work function,which increased the contact barrier and hindered the electron *** developed a new approach to recover the performance of the aged devices through the selective doping of contacts with organolithium,which prolonged the lifetime of MoS_(2)*** work not only provides important insights into the stability of 2D TMDCs devices,but also opens up a new avenue for optimizing the performance of 2D MoS_(2)devices.