Weak UV‑Stimulated Synaptic Transistors Based on Precise Tuning of Gallium‑Doped Indium Zinc Oxide Nanofibers
作者机构：College of Physics and State Key Laboratory of Bio Fibers and Eco TextilesQingdao UniversityQingdao 266071China College of Electronics and InformationQingdao UniversityQingdao 266071China School of Materials Science and EngineeringXi’an Jiaotong UniversityXi’an 710000China Center for Nanofibers&Nanotechnology Department of Mechanical EngineeringNational University of SingaporeSingapore 117574Singapore
出 版 物：《Advanced Fiber Materials》 (先进纤维材料（英文）)
年 卷 期：2023年第5卷第6期
页 面：1919-1933页
核心收录：
学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学]
基 金：the by the Natural Science Foundation of Shandong Province,China(ZR2020QF104) Key Research and Development Program of Shandong Province,China(2019GGX102067)
主 题：InGaZnO Nanofiber Artificial synaptic transistor Ultraviolet Photoresponsivity Phase transformation
摘 要：In this work,a light-stimulated artificial synaptic transistor based on one-dimensional nanofibers of gallium-doped indium zinc oxides(IGZO)is *** introduction of gallium into the nanofiber lattice can effectively alter the morphology and crystallinity,leading to a wider regulatory range of synaptic *** fabricated IGZO synaptic transistor with the optimal gallium concentration and low surface defects exhibits a superior photoresponsivity of 4300 A・W^(−1)and excellent photosensitivity,which can detect light signals as weak as 0.03 mW・cm^(−2).In particular,the paired-pulse facilitation index reaches up to 252%with over 2 h of enhanced memory retention exhibiting the long-term ***,the simulated image contrast and image recognition accuracy based on the newly designed IGZO synaptic transistors are successfully *** remarkable behaviors of light-stimulated synapses utilizing low-cost electrospun nanofibers have potential for ultraweak light applications in future artificial systems.
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