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Significant enhancement of photoresponsive characteristics and mobility of MoS2-based transistors through hybridization with perovskite CsPbBr3 quantum dots

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Nano Research 2019年第2期12卷 405-412页

作者： Taeho Noh Heung Seob Shin Changwon Seo Jun Young Kim Jongwon Youn Jeongyong Kim Kwang-Sup Lee Jinsoo Joo Department of Physics Korea University Seoul 02841 Republic of Korea Department of Advanced Materials and Chemical Engineering Hannatn University Daejeon 34430 Republic of Korea Department of Energy Science Sungkyunkwan University Suwon 16419 Republic of Korea

Inorganic perovskite CsPbBr3 quantum dots (QDs) are potential nanoscale photosensitizers;moreover,two-dimensional (2-D) molybdenum disulfide (MoS2) has been intensively studied for application in the active layers of optoelectronic *** this study,heterostructures of 2D-monolayered MoS2 with zero-dimensional functionalized CsPbBr3 QDs were prepared,and their nanoscale optical characteristics were *** effect of n-type doping on the MoS2 monolayer after hybridization with perovskite CsPbBr3 QDs was observed using laser confocal microscope photoluminescenca (PL) and Raman ***-effect transistors (FETs) using MoS2 and the MoS2-CsPbBr3 QDs hybrid were also fabricated,and their electrical and photoresponsive characteristics were investigated in terms of the charge transfer *** the MoS2-CsPbBr3 QDs-based FETs,the field effect mobility and photoresponsivity upon light irradiation were enhanced by ~ 4 times and a dramatic ~ 17 times,respectively,compared to the FET prepared without the parovskite QDs and without light *** is noteworthy that the photoresponsivity of the MoS-2-CsPbBr3 QDs-based FETs significantly increased with increasing light power,which is completely contrary to the behavior observed in previous studies of MoS2-based *** increased mobility and significant enhancement of the photoresponsivity can be attributed to the n-type doping effect and efficient energy transfer from CsPbBr3 QDs to *** results indicate that the optoelectronic characteristics of MoS2-based FETs can be significantly improved through hybridization with photosensitive parovskite CsPbBr3 QDs.

关键词： MoS2 perovskite quantum dot transistor photoresponsivity mobility charge transfer

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High-performance optoelectronic devices based on van der Waals vertical MoS2/MoSe2 heterostructures

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Nano Research 2020年第4期13卷 1053-1059页

作者： Fang Li Boyi Xu Wen Yang Zhaoyang Qi Chao Ma Yajuan Wang Xuehong Zhang Zhuoran Luo Delang Liang Dong Li Ziwei Li Anlian Pan Key Laboratory for Micro-Nano Physics and Technology of Hunan Province College of Materials and EngineeringSchool of Physics and Electronic Scienceand State Key Laboratory of Chemo/Biosensing and ChemometricsHunan UniversityChangsha 410082China

Monolayer MoS2 is a direct band gap semiconductor with large exciton binding energy,which is a promising candidate for the application of ultrathin optoelectronic ***,the optoelectronic performance of monolayer M0S2 is seriously limited to its growth quality and carrier *** this work,we report the direct vapor growth and the optoelectronic device of verticallystacked MoS2/MoSe2 heterostructure,and further discuss the mechanism of improved device *** optical and high-resolution atomic characterizations demonstrate that the heterostructure interface is of high-quality without atomic *** transport measurements indicate that the heterostructure transistor exhibits a high mobility of 28.5 cm^2/(V·s)and a high on/off ratio of 10^*** optoelectronic characterizations prove that the heterostructure device presents an enhanced photoresponsivity of 36 A/W and a remarkable detectivity of 4.8×10^11 Jones,which benefited from the interface induced built-in electric field and carrier dependent Coulomb screening *** work demonstrates that the construction of two-dimensional(2D)semiconductor heterostructures plays a significant role in modifying the optoelectronic device properties of 2D materials.

关键词： vertical heterostructure photodetector photoresponsivity mobility 2D materials

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Enhancement of photoresponsive electrical characteristics of multilayer MoS2 transistors using rubrene patches

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Nano Research 2015年第3期8卷 790-800页

作者： Eun Hei Cho Won Geun Song Cheol Joon Park Jeongyong Kim Sunkook Kim Jinsoo Joo Department of Physics Korea University Seou1136-713 R. O. Korea Department of Electronics and Radio Engineering Institute for Laser Engineering Kyung Hee University Yongin Gyeonggi-do 446-70 I R. O. Korea Center for Integrated Nanostructure Physics (CINAP) Institute for Basic Science (IBS) Department of Energy Science Sungkyunkwan University Suwon 440-746 R. O. Korea

Multilayer MoS2 is a promising active material for sensing, energy harvesting, and optoelectronic devices owing to its intriguing tunable electronic band structure. However, its optoelectronic applications have been limited due to its indirect band gap nature. In this study, we fabricated a new type of phototransistor using multilayer MoS2 crystal hybridized with p-type organic semiconducting rubrene patches. Owing to the outstanding photophysical properties of rubrene, the device characteristics such as charge mobility and photoresponsivity were considerably enhanced to an extent depending on the thickness of the rubrene patches. The enhanced photoresponsive conductance was analyzed in terms of the charge results of the nanoscale laser confocal time-resolved PL measurements. transfer doping effect, validated by the microscope photoluminescence （PL） and

关键词： MoS2 rubrene transistor photoresponsivity charge transfer

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Weak UV‑Stimulated Synaptic Transistors Based on Precise Tuning of Gallium‑Doped Indium Zinc Oxide Nanofibers

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Advanced Fiber Materials 2023年第6期5卷 1919-1933页

作者： Yuxiao Wang Ruifu Zhou Haofei Cong Guangshou Chen Yanyan Ma Shuwen Xin Dalong Ge Yuanbin Qin Seeram Ramakrishna Xuhai Liu Fengyun Wang College of Physics and State Key Laboratory of Bio Fibers and Eco Textiles Qingdao UniversityQingdao 266071China College of Electronics and Information Qingdao UniversityQingdao 266071China School of Materials Science and Engineering Xi’an Jiaotong UniversityXi’an 710000China Center for Nanofibers&Nanotechnology Department of Mechanical Engineering National University of SingaporeSingapore 117574Singapore

In this work,a light-stimulated artificial synaptic transistor based on one-dimensional nanofibers of gallium-doped indium zinc oxides(IGZO)is *** introduction of gallium into the nanofiber lattice can effectively alter the morphology and crystallinity,leading to a wider regulatory range of synaptic *** fabricated IGZO synaptic transistor with the optimal gallium concentration and low surface defects exhibits a superior photoresponsivity of 4300 A・W^(−1)and excellent photosensitivity,which can detect light signals as weak as 0.03 mW・cm^(−2).In particular,the paired-pulse facilitation index reaches up to 252%with over 2 h of enhanced memory retention exhibiting the long-term ***,the simulated image contrast and image recognition accuracy based on the newly designed IGZO synaptic transistors are successfully *** remarkable behaviors of light-stimulated synapses utilizing low-cost electrospun nanofibers have potential for ultraweak light applications in future artificial systems.

关键词： InGaZnO Nanofiber Artificial synaptic transistor Ultraviolet photoresponsivity Phase transformation

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Ultra-fast and linear polarization-sensitive photodetectors based on ReSe_(2)/MoS_(2) van der Waals heterostructures

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Journal of Materiomics 2022年第6期8卷 1158-1164页

作者： Kuilong Li Changhui Du Honglei Gao Tianhao Yin Yikang Yu Wenjia Wang International School for Optoelectronic Engineering Qilu University of Technology(Shandong Academy of Sciences)Jinan250353China School of Information and Automation Qilu University of Technology(Shandong Academy of Sciences)Jinan250353China

Recently,van der Waals heterostructures(vdWHs)constructed by transition-metal dichalcogenides(TMDCs)have come under the research spotlight owing to their excellent capabilities,multiple functionalities,and innovative architecture for advanced optoelectronic ***,novel heterojunction photodetectors composed of monolayer molybdenum disulfide(MoS2)and few-layer rhenium selenide(ReSe_(2))are explored for ultra-fast and polarization *** to the enhanced light-matter interactions and type-II band alignment of the ReSe_(2)/MoS_(2) heterostructure,the photodetector exhibits impressive performances at 638 nm in terms of a high on/off ratio~104,large photoresponsivity~3.52 A/W,high specific detectivity~1011 Jones,and large 3 dB frequency of 65.7 *** addition,ultrafast rise/decay times(5.0/9.1 ms)are obtained under pulsed incident light contributed to the built-in electric field at the heterointerface,demonstrating a result one or two orders of magnitude faster than the currently reported values of group VII-TMDCs based *** the conventional photodetection,this photodetector also displays polarization detection capability with sensitivity *** Re-based vdWHs provide superior platforms for the realization of ultra-fast and polarization-sensitive photodetection in broadband spectrum.

关键词： ReSe_(2)/MoS_(2)photodetector photoresponsivity Detectivity Response time

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Organic single-crystal phototransistor with unique wavelength-detection characteristics

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Science China Materials 2019年第5期62卷 729-735页

作者： Mengxiao Hu Jinyu Liu Qiang Zhao Dan Liu Qing Zhang Ke Zhou Jie Li Huanli Dong Wenping Hu Beijing Key Laboratory for Optical Materials and Photonic Devices Department of Chemistry Capital Normal University Beijing National Laboratory for Molecular Sciences Key Laboratory of Organic Solids Institute of Chemistry Chinese Academy of Sciences Department of Chemistry School of Science Collaborative Innovation Center of Chemical Science and Engineering Tianjin University

Organic phototransistors based on high-quality 2,8-dichloro-5,11-dihexyl-indolo[3,2-b]carbazo(CHICZ)single crystals show the highest photoresponsivity of 3×10^3 A W^-1, photosensitivity of 2×10^4 and the detectivity can achieve 8.4×10^14 Jones. We also discovered good linear dependence of log(photosensitivity) versus the wavelength when the devices were illuminated with a series of sameintensity but different-wavelength lights. The organic phototransistors based on CHICZ single crystal have potential applications in wavelength-detection.

关键词： organic phototransistor single crystal photoresponsivity photosensitivity wavelength-detection

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