Super low contact resistance in monolayer MoS_(2) transistors

作     者：Qiuhui Li Xingyue Yang Ruge Quhe Jing Lu 

作者机构：State Key Laboratory for Mesoscopic Physics and Department of PhysicsPeking UniversityBeijing 100871China State Key Laboratory of Information Photonics and Optical Communications and School of ScienceBeijing University of Posts and TelecommunicationsBeijing 100876China Collaborative Innovation Center of Quantum MatterBeijing 100871China Beijing Key Laboratory for Magnetoelectric Materials and DevicesBeijing 100871China Peking University Yangtze Delta Institute of OptoelectronicsNantong 226000China Key Laboratory for the Physics and Chemistry of NanodevicesPeking UniversityBeijing 100871China 

出 版 物：《Science China(Physics,Mechanics & Astronomy)》 (中国科学：物理学、力学、天文学（英文版）)

年 卷 期：2023年第66卷第9期

页      面：196-197页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

主　　题：transistors resistance beyond 

摘      要：Two-dimensional(2D) materials have inspired the development of beyond-silicon electronic technology owing to their atomically thin size, flat surfaces without dangling bonds,and high mechanical strength [1-3]. Contact resistance(R_(c)) is the key to realizing high-performance 2D field-effect transistors(FETs).