High Responsivity and Ultra-Low Detection Limits in Nonlinear a-Si:H p-i-n Photodiodes Enabled by Photogating

作     者：Andreas BABLICH Maurice MÜLLER Rainer BORNEMANN Andreas NACHTIGAL Peter HARING BOLÍVAR Andreas BABLICH;Maurice MüLLER;Rainer BORNEMANN;Andreas NACHTIGAL;Peter HARING BOLíVAR

作者机构：Institute of Graphene-Based NanotechnologyUniversity of SiegenHölderlinstr.357076 SiegenGermany Institute of High Frequency and Quantum ElectronicsUniversity of SiegenHölderlinstr.357076 SiegenGermany 

出 版 物：《Photonic Sensors》 (光子传感器（英文版）)

年 卷 期：2023年第13卷第4期

页      面：27-38页

核心收录：

学科分类：080202[工学-机械电子工程] 08[工学] 0802[工学-机械工程] 

基　　金：This work has received funding from the German Description Fund for Regional Development(Grant No.EFRE0200545)for the execution of the project and from DFG(Grant No.INST 221/131-1)for utilizing the instruments of the Micro and Nanoanalytics Facility(MNaF)for microscopy 

主　　题：Photogating amorphous silicon a-Si:H nonlinearity photodetector responsivity gain 

摘      要：Photodetectors operating at the wavelength in the visible spectrum are key components in high-performance optoelectronic *** this work,massive nonlinearities in amorphous silicon p-i-n photodiodes enabled by the photogating are presented,resulting in responsivities up to 744 mA/W at blue *** detectors exhibit significant responsivity gains at optical modulation frequencies exceeding MHz and a more than 60-fold enhanced spectral response compared to the non-gated *** detection limits down to 10.4 nW/mm^(2) and mean signal-to-noise ratio enhancements of 8.5dB are demonstrated by illuminating the sensor with an additional 6.6μW/mm^(2) red ***-optical simulations verify photocarrier modulation due to defect-induced field screening to be the origin of such high responsivity *** experimental results validate the theory and enable the development of commercially viable and complementary metal oxide semiconductor(CMOS)compatible high responsivity photodetectors operating in the visible range for low-light level imaging and detection.