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Highly responsive broadband Si-based MoS2 phototransistor on high-k dielectric

Science China(Information Sciences) 2024年第6期67卷 180-189页

作者： Ali IMRAN Xin HE Jiwei LIU Qinghai ZHU Muhammad SULAMAN Fei XUE Mingsheng XU Deren YANG College of Integrated Circuits State Key Laboratory of Silicon and Advanced Semiconductor MaterialsZhejiang University ZJU-Hangzhou Global Scientific and Technological Innovation Centre School of Materials Science and Engineering State Key Laboratory of Silicon and Advanced Semiconductor MaterialsZhejiang University Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems School of PhysicsBeijing Institute of Technology

The demand for photodetectors and image sensors has grown exponentially in the past decade in biomedical, security surveillance, robotics, automotive, quality control, image recognition, and military applications, due to their superior quality, broadband detection, lower noise, and economic viability. Here,we report a MoS2channel-based phototransistor over an HfO2/n-Si substrate isolated by an h BN layer. The high photoresponse is achieved through the integration of the photoconduction, photogating, and mobility enhancement process by utilizing excellent features of MoS2, HfO2/Si, and h BN. The capacitive coupling of the photogenerated carriers by high-k dielectric HfO2leads to modulation of MoS2Fermi level due to electrostatic doping. Furthermore, the MoS2also contributes to the photogeneration of carriers due to its semiconducting nature, leading to additional photocurrent. Ultimately, the combination of photogating,photoconduction, and swift carrier extraction with remarkable mobility of 11.65 cm2· V-1· s-1results in high responsivity, external quantum efficiency, and detectivity of 4.5 × 10～8A · W-1, 0.72 × 10～6, and 6.20× 1016Jones at 266 nm illumination, respectively. The device also demonstrates broadband photoresponse from 266–1000 nm wavelengths. The high responsivity distinguishes the potential of our device for the future of optoelectronics and broadband image sensing applications.

关键词： photogating photoconduction two-dimensional materials high $~k$ dielectric carrier scattering phototransistor

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High Responsivity and Ultra-Low Detection Limits in Nonlinear a-Si:H p-i-n Photodiodes Enabled by photogating

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Photonic Sensors 2023年第4期13卷 27-38页

作者： Andreas BABLICH Maurice MÜLLER Rainer BORNEMANN Andreas NACHTIGAL Peter HARING BOLÍVAR Institute of Graphene-Based Nanotechnology University of SiegenHölderlinstr.357076 SiegenGermany Institute of High Frequency and Quantum Electronics University of SiegenHölderlinstr.357076 SiegenGermany

Photodetectors operating at the wavelength in the visible spectrum are key components in high-performance optoelectronic systems.In this work,massive nonlinearities in amorphous silicon p-i-n photodiodes enabled by the photogating are presented,resulting in responsivities up to 744 mA/W at blue wavelengths.The detectors exhibit significant responsivity gains at optical modulation frequencies exceeding MHz and a more than 60-fold enhanced spectral response compared to the non-gated state.The detection limits down to 10.4 nW/mm^(2) and mean signal-to-noise ratio enhancements of 8.5dB are demonstrated by illuminating the sensor with an additional 6.6μW/mm^(2) red wavelength.Electro-optical simulations verify photocarrier modulation due to defect-induced field screening to be the origin of such high responsivity gains.The experimental results validate the theory and enable the development of commercially viable and complementary metal oxide semiconductor(CMOS)compatible high responsivity photodetectors operating in the visible range for low-light level imaging and detection.

关键词： photogating amorphous silicon a-Si:H nonlinearity photodetector responsivity gain

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High-performance ultraviolet-visible photodetector with high sensitivity and fast response speed based on MoS_(2)-on-ZnO photogating heterojunction

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Tungsten 2023年第1期5卷 91-99页

作者： Xing-Lai Zhang Jing Li Bing Leng Liu Yang Yan-Dong Song Si-Yu Feng Li-Zhi Feng Zi-Tong Liu Zheng-Wei Fu Xin Jiang Bao-Dan Liu Shenyang National Laboratory for Materials Science Institute of Metal ResearchChinese Academy of SciencesNo.72 Wenhua RoadShenyang 110016China School of Material Science and Engineering Northeastern UniversityNo.11 Wenhua RoadShenyang 110819China Foshan Graduate School of Northeastern University No.2 Zhihui RoadFoshan 528300China Department of Plastic Surgery The First Affiliated Hospital of China Medical UniversityNo.155 North Nanjing StreetShenyang 110001China School of Materials Science and Engineering University of Science and Technology of ChinaNo.72 Wenhua RoadShenyang 110016China

photogating is an effective strategy to modulate the channel conductance of the device with light-induced gate field or voltage,thereby improving the performance of optoelectronic devices.In this work,to overcome the long response time and low photoresponse of one-dimensional ZnO,a MoS_(2)-on-ZnO photogating vertical heterojunction photodetector is design and constructed.Herein,the ZnO nanowire with high carrier mobility can response ultraviolet light and supply a highspeed carrier transport channel,while the MoS_(2) flake as a photogating layer can response with visible light and transfer photogenerated electrons into the ZnO nanowire to adjust its conductivity.Thus,the irradiation of visible light is equivalent to applying a photo-induced gate voltage on the ZnO nanowire.In addition,the photogenerated electrons will not transmit through the MoS_(2) with low carrier mobility,so that not only the visible light response of the photodetector can be realized,but also its ultraviolet light response is able to be improved.Under ultraviolet light irradiation,the photoresponsivity of the photodetector can be reached to 273 A W-1and the response speed is less than 24 ms.More important,based on this unique heterojunction structure,MoS_(2)-on-ZnO photodetector also illustrates an excellent visible light response with a high photoresponsivity(74 A W-1) and fast response speed(photogating effect.This work not only paves the way to design high-performance photodetectors with high photoresponsivity and fast response speed,but also provide a promising approach to improve the performance of optoelectronic devices using photogating effect.

关键词： MoS_(2) ZnO Two-dimension photogating Photodetectors

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Enhanced NO_2 gas sensing of a single-layer MoS_2 by photogating and piezo-phototronic effects

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Science Bulletin 2019年第2期64卷 128-135页

作者： Junmeng Guo Rongmei Wen Junyi Zhai Zhong Lin Wang CAS Center for Excellence in Nanoscience Beijing Institute of Nanoenergy and Nanosystems Chinese Academy of Sciences School of Nanoscience and Technology University of Chinese Academy of Sciences Center on Nanoenergy Research School of Physical Science and Technology Guangxi University School of Materials Science and Engineering Georgia Institute of Technology

NO_2 sensors with ultrahigh sensitivity are demanded for future electronic sensing systems. However,traditional sensors are considerably limited by the relative low sensitivity, high cost and complicated process. Here, we report a simply and reliable flexible NO_2 sensor based on single-layer MoS_2. The flexible sensor exhibits high sensitivity to NO_2 gas due to ultra-large specific surface area and the nature of two-dimensional(2 D) semiconductor. When the NO_2 is 400 ppb(parts per billion), compared with the dark and strain-free conditions, the sensitivity of the single-layer sensor is enhanced to 671% with a625 nm red light-emitting diode(LED) illumination of 4 mW/cm^2 power under 0.67% tensile strain.More important, the response time is dramatically reduced to $16 s and it only needs $65 s to complete90% recovery. A theoretical model is proposed to discuss the microscopic mechanisms. We find that the remarkable sensing characteristics are the result of coupling among piezoelectricity, photoelectricity and adsorption-desorption induced charges transfer in the single-layer MoS_2 Schottky junction based device.Our work opens up the way to further enhancements in the sensitivity of gas sensor based on single-layer MoS_2 by introducing photogating and piezo-phototronic effects in mesoscopic systems.

关键词： Ultrahigh sensitivity Flexible NO2 sensor Single-layer MoS2 photogating effect Piezo-phototronic effect

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Retinomorphic hardware for in-sensor computing

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InfoMat 2023年第9期5卷 1-25页

作者： Guangdi Feng Xiaoxu Zhang Bobo Tian Chungang Duan Key Laboratory of Polar Materials and Devices(MOE) Ministry of EducationShanghai Center of Brain-inspired Intelligent Materials and DevicesDepartment of ElectronicsEast China Normal UniversityShanghaithe People's Republic of China Zhejiang Lab Hangzhouthe People's Republic of China Collaborative Innovation Center of Extreme Optics Shanxi UniversityShanxithe People's Republic of China

Rapid developments in the Internet of Things and Artificial Intelligence trigger higher requirements for image perception and learning of external environments through visual systems.However,limited by von Neumann's bottleneck,the physical separation of sense,memory,and processing units in a conventional personal computer-based vision system tend to consume a significant amount of energy,time latency,and additional hardware costs.By integrating computational tasks of multiple functionalities into the sensors themselves,the emerging bio-inspired neuromorphic visual systems provide an opportunity to overcome these limitations.With high speed,ultralow power and strong adaptability,it is highly desirable to develop a neuromorphic vision system that is based on highly precise in-sensor computing devices,namely retinomorphic devices.We here present a timely review of retinomorphic devices for visual in-sensor computing.We begin with several types of physical mechanisms of photoelectric sensors that can be constructed for artificial vision.The potential applications of retinomorphic hardware are,thereafter,thoroughly summarized.We also highlight the possible strategies to existing challenges and give a brief perspective of retinomorphic architecture for in-sensor computing.

关键词： ferroelectric in-sensor computing photogating retinomorphic device

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Direct observation and manipulation of hot electrons at room temperature

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National Science Review 2021年第9期8卷 32-40页

作者： Hailu Wang Fang Wang Hui Xia Peng Wang Tianxin Li Juzhu Li Zhen Wang Jiamin Sun Peisong Wu Jiafu Ye Qiandong Zhuang Zaixing Yang Lan Fu Weida Hu Xiaoshuang Chen Wei Lu State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences University of Chinese Academy of Sciences Henan Key Laboratory of Diamond Optoelectronic Materials and Devices School of Physics and Engineering Zhengzhou University School of Microelectronics Shandong University Department of Physics Lancaster University Department of Electronic Materials Engineering Research School of Physics and Engineering The Australian National University

In modern electronics and optoelectronics, hot electron behaviors are highly concerned, as they determine the performance limit of a device or system, like the associated thermal or power constraint of chips and the Shockley-Queisser limit for solar cell efficiency. To date, however, the manipulation of hot electrons has been mostly based on conceptual interpretations rather than a direct observation. The problem arises from a fundamental fact that energy-differential electrons are mixed up in real-space, making it hard to distinguish them from each other by standard measurements. Here we demonstrate a distinct approach to artificially(spatially) separate hot electrons from cold ones in semiconductor nanowire transistors, which thus offers a unique opportunity to observe and modulate electron occupied state, energy, mobility and even path. Such a process is accomplished through the scanning-photocurrent-microscopy measurements by activating the intervalley-scattering events and 1D charge-neutrality rule. Findings here may provide a new degree of freedom in manipulating non-equilibrium electrons for both electronic and optoelectronic applications.

关键词： hot electrons valley transfer photogating scanning photocurrent mapping

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