Rapid epitaxy of 2-inch and high-quality α-Ga_(2)O_(3) films by mist-CVD method

作     者：Xiaojie Wang Wenxiang Mu Jiahui Xie Jinteng Zhang Yang Li Zhitai Jia Xutang Tao Xiaojie Wang;Wenxiang Mu;Jiahui Xie;Jinteng Zhang;Yang Li;Zhitai Jia;Xutang Tao

作者机构：State Key Laboratory of Crystal MaterialsInstitute of novel semiconductorsInstitute of Crystal materialsShandong UniversityJinan 250100China Shenzhen Research Institute of Shandong UniversityShenzhen 518057China Shandong Research Institute of Industrial TechnologyJinan 250101China 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2023年第44卷第6期

页      面：52-58页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：National Natural Science Foundation of China (Grant Nos. 52002219, 51932004 and 61975098) Key-Area Research and Development Program of Guangdong Province (Grant No. 2020B010174002) Shenzhen Fundamental Research Program (Grant No. JCYJ20210324132014038) Natural Science Foundation of Shandong (Grant No. ZR202105230005) the 111 Project 2.0 (Grant No. BP2018013) 

主　　题：ultra-wide bandgap semiconductor mist-chemical vapor deposition epitaxy alpha-gallium oxide 

摘      要：High thickness uniformity and large-scale films of α-Ga_(2)O_(3) are crucial factors for the development of power *** this work, a high-quality 2-inch α-Ga_(2)O_(3) epitaxial film on c-plane sapphire substrates was prepared by the mist-CVD *** growth rate and phase control mechanisms were systematically investigated. The growth rate of the α-Ga_(2)O_(3) films was limited by the evaporation of the microdroplets containing gallium acetylacetonate. By adjusting the substrate position(z) from 80 to 50 mm, the growth rate was increased from 307 nm/h to 1.45 μm/h when the growth temperature was fixed at 520 °*** the growth temperature exceeded 560 °C, ε-Ga_(2)O_(3) was observed to form at the edges of 2-inch sapphire *** control was achieved by adjusting the growth temperature. When the growth temperature was 540 °C and the substrate position was 50 mm, the full-width at half maximum(FWHM) of the rocking curves for the(0006) and(10-14) planes were 0.023° and 1.17°. The screw and edge dislocations were 2.3 × 10~6 and 3.9 × 10~(10)cm~(-2), respectively. Furthermore, the bandgaps and optical transmittance of α-Ga_(2)O_(3) films grown under different conditions were characterized utilizing UV-visible and near-IR scanning spectra.