Impact of polarization switching on the effective carrier mobility of HfZrOx ferroelectric field-effect transistor

作     者：Fenning LIU Yue PENG Wenwu XIAO Yan LIU Xiao YU Genquan HAN Fenning LIU;Yue PENG;Wenwu XIAO;Yan LIU;Xiao YU;Genquan HAN

作者机构：School of MicroelectronicsXidian University Research Center for Intelligent Chips Xi'an UniIC Semiconductors Hangzhou Institute of TechnologyXidian University 

出 版 物：《Science China(Information Sciences)》 (中国科学:信息科学(英文版))

年 卷 期：2023年第66卷第6期

页      面：305-306页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：supported by National Key Research and Development Project (Grant No. 2018YFB2200500) National Natural Science Foundation of China (Grant No. 62025402, 62090033, 91964202, 92064003, 61874081, 62004149) Key Research Project of Zhejiang Lab (Grant No. 2021MD0AC01) 

主　　题：Zirconium compounds 

摘      要：Doped-HfO2ferroelectrics have attracted tremendous research interest for non-volatile memory and memory-incomputing applications due to their CMOS compatibility,advantages of non-destructive reading,and low power consumption [1,2]. Recently,